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Deposition method of Cu/ZnO/Al photoelectric transparent conducting film

A transparent conductive film and deposition method technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of high hardness, difficult etching, and doping process of FTO films, and achieve easy control of the deposition process and improved conductivity , The effect of simple preparation process

Active Publication Date: 2013-04-03
辽宁普天能源发电集团亿峰新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation of high-quality crystalline FTO films is difficult and requires high preparation processes. Due to the existence of internal defects in the film, the light transmittance and electrical conductivity are lower than those of ITO films; There is some pollution in the process
In addition, due to the high hardness of the FTO film, it is difficult to etch

Method used

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  • Deposition method of Cu/ZnO/Al photoelectric transparent conducting film
  • Deposition method of Cu/ZnO/Al photoelectric transparent conducting film
  • Deposition method of Cu/ZnO/Al photoelectric transparent conducting film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] After the substrate was cleaned with acetone, ethanol and deionized water by ultrasonic waves in sequence, it was blown dry with nitrogen and sent to the reaction chamber.

[0029] Vacuum the background of magnetron sputtering to 9.0×10 -4 After Pa, the substrate is heated to 100°C and the gas flow rate is adjusted to make the pressure reach 5Pa, the sputtering power is 100W, the sputtering time is 1min, and the thickness of the Al film is 30nm.

[0030] Then, the ZnO film was deposited and prepared by plasma-enhanced electron cyclotron resonance chemical vapor deposition, and the vacuum was pumped to 7.0×10 -4 After Pa, the substrate was heated to 100°C, and diethylzinc Zn(CH 2 CH 3 ) 2 and oxygen O 2 After that, Zn(CH 2 CH 3 ) 2 and O 2 The flow ratio is controlled by a mass flowmeter to be 1sccm: 100sccm, and the total pressure of the gas is controlled to be 1.6Pa; at the electron cyclotron resonance frequency of 650W, the reaction takes 25min to obtain a 40...

Embodiment 2

[0039] After cleaning the substrate with acetone, ethanol and deionized water with ultrasonic waves in sequence, blow it dry with nitrogen and send it into the reaction chamber, and vacuum the background of magnetron sputtering to 9.0×10 -4 After Pa, the substrate is heated to 100°C and the gas flow rate is adjusted so that the pressure reaches 5Pa, the sputtering power is 100W, and the sputtering time is 1min, the thickness of the Al film is 30nm.

[0040] Then, the ZnO film was deposited and prepared by plasma-enhanced electron cyclotron resonance chemical vapor deposition, and the vacuum was pumped to 7.0×10 -4 After Pa, the substrate was heated to 100°C, and diethylzinc Zn(CH 2 CH 3 ) 2 and oxygen O 2 After that, Zn(CH 2 CH 3 ) 2 and O 2 The amount is controlled by a mass flow meter to 2sccm: 200sccm, and the total pressure of the controlled gas is 1.8Pa; at the electron cyclotron resonance frequency of 650W, react for 30 minutes to obtain a 500nm ZnO thin film.

...

Embodiment 3

[0047] After cleaning the substrate with acetone, ethanol and deionized water with ultrasonic waves in sequence, blow it dry with nitrogen and send it into the reaction chamber, and vacuum the background of magnetron sputtering to 9.0×10 -4 After Pa, the substrate is heated to 100°C and the gas flow rate is adjusted so that the pressure reaches 5Pa, the sputtering power is 100W, and the sputtering time is 5min. The thickness of the Al film is 50nm.

[0048] Then, the ZnO film was deposited and prepared by plasma-enhanced electron cyclotron resonance chemical vapor deposition, and the vacuum was pumped to 7.0×10 -4 After Pa, the substrate was heated to 100°C, and diethylzinc Zn(CH 2 CH 3 ) 2 and oxygen O 2 After that, Zn(CH 2 CH 3 ) 2 and O 2 The amount is controlled by a mass flow meter to 2sccm: 150sccm, and the total pressure of the controlled gas is 2.0Pa; at the electron cyclotron resonance frequency of 650W, react for 40min to obtain a 600nm ZnO thin film.

[004...

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Abstract

The invention relates to a deposition method of a Cu / ZnO / Al photoelectric transparent conducting film, belonging to the field of transparent conducting materials. The method comprises the following steps: (1) sequentially carrying out ultrasonic cleaning on a substrate with acetone, ethanol and deionized water, blow-drying with nitrogen gas, and sending the substrate into a reaction chamber; (2) depositing a magnetron sputtering Al film; (3) preparing a middle-layer ZnO film by organic substance chemical vapor deposition; (4) depositing a magnetron sputtering Cu film; and (5) carrying out high-temperature annealing on the Cu / ZnO / Al multilayer-structure transparent conducting film at 100-400 DEG C for 30 minutes to obtain the Cu / Al-codoped ZnO photoelectric transparent conducting film. The preparation technique is simple, and the deposition process is easy to control. The transparent conducting film has the advantages of favorable uniformity, excellent photoelectric properties and low resistivity (down to 8.0*10<-4>Omega.cm), and the light transmittance is up to higher than 82%. The transparent conducting film can be used for manufacturing transparent electrodes of photoelectric devices, such as solar cells, light-emitting diodes, LCDs (liquid crystal displays), mobile phones and the like.

Description

technical field [0001] The invention belongs to the field of transparent conductive materials, in particular to a deposition method of Cu / ZnO / Al photoelectric transparent conductive film. Background technique [0002] With the development of society and the rapid advancement of science and technology, the demand for functional materials is increasing, and new functional materials have become the key to the development of new technologies and emerging industries. With the development of industries such as solar energy, flat panel display and semiconductor lighting, a new functional material - transparent conductive material has been produced and developed. [0003] Transparent conductive film glass is transparent conductive oxide coated glass, which is uniformly coated with a layer of TCO film on the surface of flat glass by physical or chemical coating methods. There are mainly three types of TCO materials currently in use, ITO-In 2 o 3 Base film (Sn doped), FTO-SnO 2 Ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C28/00H01L31/18
CPCY02P70/50
Inventor 鞠振河张东郑洪赵琰曲博
Owner 辽宁普天能源发电集团亿峰新能源科技有限公司
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