Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing Al-doped ZnO transparent conductive film by atomic layer deposition

A transparent conductive film, atomic layer deposition technology, applied in coating, metal material coating process, gaseous chemical plating and other directions, can solve the problems of uneven doping of Al composition, high resistivity of AZO film, etc., and achieve photoelectric performance. Excellent, easily controllable deposition process, improved electrical conductivity

Inactive Publication Date: 2012-07-04
SHANGHAI JIAO TONG UNIV +1
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] After searching the prior art, it was found that Banerjee et al. proposed to use the The ALD method prepares the AZO conductive thin film, adopts introducing trimethyl aluminum and then introducing water vapor as the Al doping cycle, but the resistivity of the prepared AZO thin film is relatively high due to the uneven doping of the Al component in this prior art, and the lowest is 4.4 ×10 -3 Ω·cm

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing Al-doped ZnO transparent conductive film by atomic layer deposition
  • Method for preparing Al-doped ZnO transparent conductive film by atomic layer deposition
  • Method for preparing Al-doped ZnO transparent conductive film by atomic layer deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The glass substrate was cleaned with isopropanol and deionized water in an ultrasonic cleaner, dried and placed in an atomic layer deposition chamber. Vacuum to 10hPa ~ 16hPa, heat the substrate to 200°C, and carry out ZnO deposition cycle, that is, diethylzinc / N 2 / H 2 O / N 2 =(0.1s / 3s / 0.1s / 3s), after 9 cycles, an Al-doped deposition cycle is performed, that is, diethylzinc / N 2 / trimethylaluminum / N 2 / H 2 O / N 2 =(0.1s / 3s / 0.1s / 3s / 0.1s / 3s), the ZnO deposition cycle and the Al-doped deposition cycle are a large cycle, and the large cycle is performed 50 times. After the temperature of the deposition chamber drops to room temperature, the deposition Chamber, made a thin film with a thickness of about 80nm, and analyzed by ICP composition, the doping amount of Al was 4.6at.%.

Embodiment 2

[0024] The glass substrate was cleaned with isopropanol and deionized water in an ultrasonic cleaner, dried and placed in an atomic layer deposition chamber. Vacuum to 10hPa ~ 16hPa, heat the substrate to 200°C, and carry out ZnO deposition cycle, that is, diethylzinc / N 2 / H 2 O / N 2 =(0.1s / 3s / 0.1s / 3s), after 14 cycles, an Al-doped deposition cycle is performed, that is, diethylzinc / N 2 / trimethylaluminum / N 2 / H 2 O / N 2 =(0.1s / 3s / 0.1s / 3s / 0.1s / 3s), the ZnO deposition cycle and the Al doping deposition cycle are a large cycle, and the large cycle is performed 34 times. After the temperature of the deposition chamber drops to room temperature, the deposition Chamber, made a thin film with a thickness of about 80nm, and analyzed by ICP composition, the doping amount of Al was found to be 3.7 at.%.

Embodiment 3

[0026] The glass substrate was cleaned with isopropanol and deionized water in an ultrasonic cleaner, dried and placed in an atomic layer deposition chamber. Vacuum to 10hPa ~ 16hPa, heat the substrate to 200°C, and carry out ZnO deposition cycle, that is, diethylzinc / N 2 / H 2 O / N 2 =(0.1s / 3s / 0.1s / 3s), after 19 cycles, an Al-doped deposition cycle is performed, that is, diethylzinc / N 2 / trimethylaluminum / N 2 / H 2 O / N 2 =(0.1s / 3s / 0.1s / 3s / 0.1s / 3s), the ZnO deposition cycle and the Al-doped deposition cycle are a large cycle, and the large cycle is performed 25 times. After the temperature of the deposition chamber drops to room temperature, the deposition Chamber, made a thin film with a thickness of about 100nm, and analyzed by ICP composition, the doping amount of Al was found to be 2.9 at.%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing an Al-doped ZnO transparent conductive film by atomic layer deposition in the technical field of photoelectric materials. The method comprises the following steps of: heating a substrate, and then performing multiple groups of composite depositions to obtain the Al-doped ZnO transparent conductive film by atomic layer deposition, wherein each group of composite deposition consists of multiple ZnO depositions and Al-doped deposition. The transparent conductive film prepared by the method has excellent uniformity, good electric conductivity, low resistivity reaching 7.2*10<-4>cm and high visible light transmittance reaching over 90 percent.

Description

technical field [0001] The invention relates to a method for preparing a transparent conductive film in the technical field of photoelectric materials, in particular to a method for preparing an Al-doped ZnO transparent conductive film by atomic layer deposition. Background technique [0002] In recent years, transparent conducting oxides (TCOs) have been widely used as electrode materials in optoelectronic devices, including solar cells, flat panel displays, organic light-emitting diodes (OLEDs), etc. Indium tin oxide (ITO) is the most commonly used TCO material due to its high electrical conductivity and high visible light transmittance. However, due to the scarcity of indium and the high price of ITO, ZnO-based transparent conductive films have become a research hotspot because of their excellent optoelectronic properties, non-toxicity and low price. As a transparent electrode, non-doped pure ZnO has high resistivity and is unstable at high temperature, and its performan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40C23C16/44
Inventor 宋佳姜来新牟海川尹桂林余震何丹农
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com