Method of preparing antifriction I1F-WS2/IF-MoS2 composite film by magnetic controlled sputtering
A technology of IF-WS2 and magnetron sputtering, which is applied in the preparation field of solid lubrication technology, can solve the problems of low bonding strength, insufficient film load capacity and wear resistance failure, etc., and achieve the improvement of load capacity and wear resistance, The deposition process is easy to control and the effect of excellent wear resistance
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Embodiment 1
[0010] Embodiment 1: Polish the stainless steel substrate to a smoothness of less than 0.05 μm, clean it with alcohol and acetone in an ultrasonic cleaner, dry it, and put it into a sputtering chamber. Vacuum to 10 -3 Pa, argon gas is introduced, the pressure in the vacuum chamber is adjusted to 0.4Pa, the bias voltage of the substrate is -100V, IF-MoS 2 Target RF sputtering, power 150W, IF-WS 2 The target is used for DC sputtering with a power of 120W, and the Ni target is used for DC sputtering with a power of 100W. Before sputtering, the target was cleaned for 1 hour, and the substrate was cleaned with an auxiliary ion source for 30 minutes. Then, the Ni target was sputtered for 5 minutes, with a thickness of about 50nm, and then the Ni power was turned off, and the IF-MoS 2 and IF-WS 2 The target starts co-sputtering according to the predetermined power, and the sputtering time is 2 hours. After the temperature of the vacuum chamber drops to room temperature, the vacuu...
Embodiment 2
[0011] Embodiment 2: Polish the stainless steel substrate to a smoothness of less than 0.05 μm, clean it with alcohol and acetone in an ultrasonic cleaner, dry it, and put it into a sputtering chamber. Vacuum to 10 -3 Pa, enter argon gas, adjust the air pressure in the vacuum chamber to 0.1Pa, and the bias voltage of the substrate to -100V, IF-MoS 2 RF sputtering for target, power 300W, IF-WS 2 The target is used for DC sputtering with a power of 100W, and the Ni target is used for DC sputtering with a power of 100W. Before sputtering, the target was cleaned for 1 hour, and the substrate was cleaned with an auxiliary ion source for 30 minutes. Then, the Ni target was sputtered for 3 minutes, with a thickness of about 50nm, and then the Ni power was turned off, and the IF-MoS 2 and IF-WS 2 The target starts co-sputtering according to the predetermined power, and the sputtering time is 2 hours. After the temperature of the vacuum chamber drops to room temperature, the vacuum...
Embodiment 3
[0012] Embodiment 3: Polish the stainless steel substrate to a smoothness of less than 0.05 μm, clean it with alcohol and acetone in an ultrasonic cleaner, dry it, and put it into a sputtering chamber. Vacuum to 10 -3 Pa, enter argon gas, adjust the pressure in the vacuum chamber to 1Pa, and the bias voltage of the substrate to -100V, IF-MoS 2 RF sputtering for target, power 100W, IF-WS 2 The target is used for DC sputtering with a power of 100W, and the Ni target is used for DC sputtering with a power of 300W. Before sputtering, the target was cleaned for 1 hour, and the substrate was cleaned with an auxiliary ion source for 30 minutes. Then, the Ni target was sputtered for 7 minutes, with a thickness of about 50nm, and then the Ni power was turned off, and the IF-MoS 2 and IF-WS 2 The target starts co-sputtering according to the predetermined power, and the sputtering time is 2 hours. After the temperature of the vacuum chamber drops to room temperature, the vacuum chamb...
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