A method for preparing copper-indium-gallium-sulfur solar cell thin film material after electrodeposition by bipotential step method

A technology of solar cells and copper indium gallium sulfide, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as hindering the conversion efficiency of solar cells, difficulty in providing cathode overpotential, and small electrochemical stability window, and achieve large-area The effects of high-quality film preparation, improvement of microscopic characteristics such as composition and morphology, and avoidance of adverse effects

Active Publication Date: 2016-11-30
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Electrodeposition is carried out in aqueous solution. Since the electrochemical stability window of water is relatively small, it is difficult to provide a large cathode overpotential during multi-element co-deposition. When the deposition potential is too negative, hydrogen evolution reaction is easy to occur, resulting in many pores in the deposited film. Inhomogeneity, the composition of the film deviates from the stoichiometric ratio, and the quality of the film is poor, which seriously hinders the conversion efficiency of solar cells

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  • A method for preparing copper-indium-gallium-sulfur solar cell thin film material after electrodeposition by bipotential step method
  • A method for preparing copper-indium-gallium-sulfur solar cell thin film material after electrodeposition by bipotential step method
  • A method for preparing copper-indium-gallium-sulfur solar cell thin film material after electrodeposition by bipotential step method

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Embodiment 1

[0032] A method for preparing a copper indium gallium sulfur solar cell thin film material after electrodeposition by a bipotential step method and followed by sulfuration annealing, the preparation steps are as follows:

[0033] (1) Mix choline chloride and urea in a molar ratio of 1:2, stir evenly and place in a vacuum oven at 80°C for 10 hours to prepare 40ml of colorless and transparent ionic liquid;

[0034] (2) Dissolving 30mM cupric chloride in the ionic liquid, stirring it to fully dissolve;

[0035] (3) Add 60mM gallium chloride again, stir to make it fully dissolve;

[0036] (4) Use acetone, ethanol and deionized water successively to ultrasonically clean the ITO conductive glass for 10 minutes, and then dry the ITO conductive glass with high-purity nitrogen;

[0037](5) With the ITO conductive glass substrate cleaned in step (4) as the working electrode, the saturated calomel electrode as the reference electrode, and the platinum wire as the counter electrode, with...

Embodiment 2

[0045] A method for preparing a copper indium gallium sulfur solar cell thin film material after electrodeposition by a bipotential step method and followed by sulfuration annealing, the preparation steps are as follows:

[0046] (1) Mix choline chloride and urea in a molar ratio of 1:2, stir evenly and place in a vacuum oven at 80°C for 10 hours to prepare 40ml of colorless and transparent ionic liquid;

[0047] (2) Dissolving 40mM cupric chloride in the ionic liquid, stirring it to fully dissolve;

[0048] (3) Add 75mM gallium chloride again, stir to make it fully dissolve;

[0049] (4) Use acetone, ethanol and deionized water successively to ultrasonically clean the ITO conductive glass for 30 minutes, then dry the ITO conductive glass with high-purity nitrogen;

[0050] (5) With the ITO conductive glass substrate cleaned in step (4) as the working electrode, the saturated calomel electrode as the reference electrode, and the platinum wire as the counter electrode, with -0...

Embodiment 3

[0053] A method for preparing a copper indium gallium sulfur solar cell thin film material after electrodeposition by a bipotential step method and followed by sulfuration annealing, the preparation steps are as follows:

[0054] (1) Mix choline chloride and urea in a molar ratio of 1:2, stir evenly and place in a vacuum oven at 80°C for 10 hours to prepare 40ml of colorless and transparent ionic liquid;

[0055] (2) Dissolving 30mM cupric chloride in the ionic liquid, stirring it to fully dissolve;

[0056] (3) Add 65mM gallium chloride again, stir to make it fully dissolve;

[0057] (4) Use acetone, ethanol and deionized water successively to ultrasonically clean the ITO conductive glass for 20 minutes, and then dry the ITO conductive glass with high-purity nitrogen;

[0058] (5) With the ITO conductive glass substrate cleaned in step (4) as the working electrode, the saturated calomel electrode as the reference electrode, and the platinum wire as the counter electrode, wit...

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Abstract

The invention discloses a sulfide annealing copper indium gallium sulfur solar cell thin film material preparation method after double-potential step method electrodeposition. The method comprises the steps that copper and gallium metal salt is used as a main raw material; the main raw material is dissolved in an ionic liquid at a certain concentration; a copper gallium precursor thin film is prepared on ITO conductive glass through double-potential cycle step method electrodeposition; sulfide annealing is carried out on the precursor thin film; in the annealing process, indium in the ITO conductive layer diffuses into the thin film; and finally a copper indium gallium sulfur thin film is generated. Compared with a traditional constant potential deposition technology, the method provided by the invention has the advantages that by controlling double potential pulse potential, controllable preparation of the crystalline phase, the composition, the morphology and the like of the thin film can be realized; pore structures are reduced; the thin film morphology is improved; the plating rate is improved; and hydrogen evolution reaction does not produce any adverse effect on the thin film in the deposition process. Compared with a high-vacuum vapor phase method, the method provided by the invention has the advantages of good film quality, low cost, high controllability and the like.

Description

technical field [0001] The invention belongs to the field of new energy sources of optoelectronic materials, and relates to a preparation method of sulfuration annealing after multi-potential step method electrodeposition of thin-film solar cell photoelectric conversion materials, and specifically relates to a bipotential step method electrodeposition copper on ITO conductive glass A method for forming a copper indium gallium sulfide thin film after sulfuration annealing of the gallium thin film. Background technique [0002] The depletion of fossil energy and the damage to the ecological environment make it urgent to study various renewable and environmentally friendly energy sources. Solar energy is favored by people because of its renewable, pollution-free, and large reserves. Chalcopyrite series Cu(In,Ga,Al)(S,Se) 2 (CIGASS) material is a direct bandgap semiconductor with a high light absorption coefficient of 10 5 cm -1 , only 1-2um thick film can absorb more than 9...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032
CPCH01L31/0322Y02E10/541
Inventor 杨穗曹洲钟建新易捷
Owner XIANGTAN UNIV
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