Method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition

A solar cell, copper indium aluminum selenium technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of large difference in deposition potential, poor film quality, and difficult control of the deposition process, and achieve low cost and easy control , the effect of adjustable stoichiometric ratio

Active Publication Date: 2018-09-14
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are few documents reporting the preparation of CIAS by electrodeposition method. The only few documents are to obtain Cu-In-Al-Se thin film by one-step electrodeposition method in aqueous solution, and then annealing treatment. 2+ , In 3+ , Al 3+ The deposition potential of aluminum has a large difference, especially aluminum is a very active metal, its standard electrode potential is even more negative than hydrogen, the deposition process is not easy to control, the quality of the deposited film is poor, and the composition deviates seriously from the stoichiometric ratio

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  • Method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition
  • Method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition
  • Method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition

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Embodiment 1

[0036] A method for preparing copper indium aluminum selenium solar cell thin film material after layered electrodeposition by selenization annealing, the preparation steps are as follows:

[0037] (1) Place analytically pure NaCl and KCl in a muffle furnace at 400°C for 5 hours, then mix with analytically pure AlCl 3 by AlCl 3 , NaCl, KCl 8:1:1 mass ratio is fully mixed to prepare AlCl 3 -NaCl-KCl ternary inorganic molten salt system;

[0038] (2) heating with a heat-collecting stirrer, controlling the temperature to 130°C for the inorganic molten salt system obtained in step (1) to melt the mixed salt;

[0039] (3) Raise the temperature of the molten salt obtained in step (2) to 150°C, and then insert two aluminum electrodes to pre-electrolyte decontaminate the molten salt. 2 , the electrolysis time is 0.5h;

[0040] (4) The molybdenum glass is ultrasonically cleaned with acetone and ethanol for 30 minutes, then ultrasonically cleaned with deionized water for 20 minutes,...

Embodiment 2

[0050] A method for preparing copper indium aluminum selenium solar cell thin film material after layered electrodeposition by selenization annealing, the preparation steps are as follows:

[0051] (1) Place analytically pure NaCl and KCl in a muffle furnace at 400°C for 5 hours, then mix with analytically pure AlCl 3 by AlCl 3 , NaCl, KCl 8:1:1 mass ratio fully mixed, prepared into AlCl 3 -NaCl-KCl ternary inorganic molten salt system;

[0052] (2) Heating with a heat collecting stirrer, controlling the temperature of the inorganic molten salt system obtained in step (1) to 130° C. to melt the mixed salt.

[0053] (3) Raise the temperature of the molten salt obtained in step (2) to 150°C, and then insert two aluminum electrodes to pre-electrolyte decontaminate the molten salt. 2 , the electrolysis time is 0.5h;

[0054](4) The molybdenum glass is ultrasonically cleaned with acetone and ethanol for 20 minutes, then ultrasonically cleaned with deionized water for 20 minutes...

Embodiment 3

[0059] A method for preparing copper indium aluminum selenium solar cell thin film material after layered electrodeposition by selenization annealing, the preparation steps are as follows:

[0060] (1) Dissolve 10g of copper sulfate pentahydrate in 50ml of deionized water, then add 3g of sulfuric acid and stir to fully dissolve it, and prepare an acidic copper sulfate copper plating electrolyte solution, ultrasonically clean the molybdenum glass with acetone and ethanol for 20 minutes, and then use Ultrasonic cleaning with deionized water for 20 minutes and drying. The cleaned molybdenum glass is used as the cathode, and the high-purity copper sheet is used as the anode for electrodeposition, and the current density of the electrodeposition is 10A / dm 2 , the deposition time is 60 seconds, after the deposition is completed, wash with deionized water and absolute ethanol and dry;

[0061] (2) Place analytically pure NaCl and KCl in a muffle furnace at 400°C for 5 hours, then co...

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Abstract

The invention discloses a method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition. In order to overcome the hydrogen evolution phenomenon in an aqueous solution, caused by electrodeposition of aluminum, the method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing afterlayered electrodeposition deposits an aluminum thin film by means of a fuse salt electrodeposition method, then dissolves the copper metal salt in deionized water, electrodeposits copper on the aluminized film, dissolves indium metal salt in the deionized water, electrodeposits indium on the aluminized / copper-plated film, and then selenizes and anneals the precursor film to obtain a copper indiumaluminum selenium film. The method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition can realize controllable preparation of film compositions, crystal structure, morphology, and the like by means of layered control of the deposition current density and time of each layer of film. Compared with an electrodeposition method in one-step aqueous solution, the film prepared by the method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition has higher purity and does not have CuxSey or InxSey binary phase. Compared with a high vacuum method, the method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition has high controllability, simple preparation process, high utilization rate of raw materials, low cost, and high repeatability, and is easy to achieve preparation of films with large area and high quality.

Description

technical field [0001] The invention belongs to the field of new energy sources of photoelectric materials, and relates to a preparation method of selenization annealing after layered electrodeposition of photoelectric conversion materials for thin-film solar cells, in particular to a method of electrodepositing elemental copper in an aqueous solution after electrodepositing aluminum in a molten salt and elemental indium thin film, followed by selenization annealing method to form copper indium aluminum selenium thin film. Background technique [0002] Facing the severe energy situation and the deterioration of the ecological environment, changing the existing energy structure and developing renewable green energy has become a topic of great concern to all countries in the world. Solar energy has attracted much attention because it is the cleanest and environmentally friendly, inexhaustible, safe and stable. Chalcopyrite series Cu(In,Ga,Al)(S,Se) 2 (CIGASS) materials have ...

Claims

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Application Information

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IPC IPC(8): H01L31/032C25D5/10C25D5/48
CPCC25D5/10C25D5/48H01L31/0322Y02E10/541
Inventor 杨穗时亚广易捷田心怡钟建新
Owner XIANGTAN UNIV
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