Method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition

Abstract

The invention discloses a method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition. In order to overcome the hydrogen evolution phenomenon in an aqueous solution, caused by electrodeposition of aluminum, the method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing afterlayered electrodeposition deposits an aluminum thin film by means of a fuse salt electrodeposition method, then dissolves the copper metal salt in deionized water, electrodeposits copper on the aluminized film, dissolves indium metal salt in the deionized water, electrodeposits indium on the aluminized / copper-plated film, and then selenizes and anneals the precursor film to obtain a copper indiumaluminum selenium film. The method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition can realize controllable preparation of film compositions, crystal structure, morphology, and the like by means of layered control of the deposition current density and time of each layer of film. Compared with an electrodeposition method in one-step aqueous solution, the film prepared by the method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition has higher purity and does not have CuxSey or InxSey binary phase. Compared with a high vacuum method, the method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition has high controllability, simple preparation process, high utilization rate of raw materials, low cost, and high repeatability, and is easy to achieve preparation of films with large area and high quality.

Description

technical field [0001] The invention belongs to the field of new energy sources of photoelectric materials, and relates to a preparation method of selenization annealing after layered electrodeposition of photoelectric conversion materials for thin-film solar cells, in particular to a method of electrodepositing elemental copper in an aqueous solution after electrodepositing aluminum in a molten salt and elemental indium thin film, followed by selenization annealing method to form copper indium aluminum selenium thin film. Background technique [0002] Facing the severe energy situation and the deterioration of the ecological environment, changing the existing energy structure and developing renewable green energy has become a topic of great concern to all countries in the world. Solar energy has attracted much attention because it is the cleanest and environmentally friendly, inexhaustible, safe and stable. Chalcopyrite series Cu(In,Ga,Al)(S,Se) 2 (CIGASS) materials have ...

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Problems solved by technology

At present, there are few documents reporting the preparation of CIAS by electrodeposition method. The only few documents are to obtain Cu-In-Al-Se thin film by one-step electrodeposition method in aqueous solution, and then annealing treatment. 2+ , In 3+ , Al 3+ The deposition potential of aluminum has a large difference, especially aluminum is a very active metal, its standard electrode potential is even more negative than hydrogen, the deposition process is not easy to control, the quality of the deposited film is poor, and the composition deviates seriously from the stoichiometric ratio

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