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Method for forming via hole array and method for forming semiconductor device

An array and array area technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as position deviation, mask position deviation, and inability to completely cover the grid

Active Publication Date: 2022-04-08
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when the photolithography process is performed in combination with the masking mask, due to the limitation of the alignment accuracy of the photolithography process, it is very easy to have a positional deviation among the three masks, which will cause the masking mask to be in the masking grid. There is also a positional deviation at the boundary of the array, so that the undesired grid cannot be completely covered. After the undesired grid is exposed, it will further lead to the subsequent formation of undesired holes.

Method used

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  • Method for forming via hole array and method for forming semiconductor device
  • Method for forming via hole array and method for forming semiconductor device
  • Method for forming via hole array and method for forming semiconductor device

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Embodiment 1

[0092] image 3 It is a schematic flow chart of the method for forming the through-hole array in Embodiment 1 of the present invention, Figure 5a ~ Figure 13a and Figure 5b ~ Figure 13b It is a schematic diagram of the structure of the method for forming the through-hole array in the first embodiment of the present invention during its preparation. Each step of the forming method in this embodiment will be described in detail below with reference to the accompanying drawings.

[0093] In step S100, specifically refer to Figure 5a and Figure 5b As described above, a substrate 200 is provided, and the first mask layer 300 is formed on the substrate.

[0094] Wherein, an array area A is defined on the substrate 200 , and the through-hole array to be formed later is formed in the array area A. And, by forming the first mask layer 300 on the substrate 200, the pattern of the opening array can be defined on the first mask layer 300, and further copied to the substrate 200....

Embodiment 2

[0142] This embodiment provides a method for forming a semiconductor device, which uses the above-mentioned forming method to form a through-hole array, and further prepares a semiconductor device based on the formed through-hole array.

[0143] For example, the semiconductor device is a memory, and the memory includes a memory cell array and a capacitor array. Correspondingly, the memory cell array of the memory may be formed in a substrate, and a capacitor array is further formed through the through hole array formed in the substrate, and the capacitor array is correspondingly connected to the memory cell array.

[0144] Figure 14a ~ Figure 14c It is a schematic structural view of the method for forming a semiconductor device in Embodiment 2 of the present invention during its preparation process. The method for forming the semiconductor device in this embodiment will be described in detail below with reference to the accompanying drawings and taking forming a memory as an...

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Abstract

The invention provides a method for forming a through hole array and a method for forming a semiconductor device. Optimize the pattern of the first grid array through the second mask layer, so that the first grid and the second grid at the edge position in the first grid array are connected to each other, which is equivalent to eliminating the undesired formation of the first grid. grid, or it can also be considered that when the first grid has a problem with a small opening size, by merging with the second grid, it overcomes the existence of a grid with a small opening size in the second grid array that is finally formed To ensure that each through hole in the through hole array can extend to a predetermined depth position of the substrate when the second lattice array is replicated into the substrate to form the through hole array later.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a through-hole array and a method for forming a semiconductor device. Background technique [0002] With the continuous advancement of semiconductor technology, the process nodes of semiconductor devices are constantly decreasing, which correspondingly makes the window of the photolithography process smaller and smaller. Based on this, a double-patterning lithography technique was proposed. For example, a denser hole array with a smaller size can be prepared by using double patterning lithography technology. [0003] Specifically, in the photolithography process used to define the hole array, it is usually necessary to use two masks, and two kinds of lines extending in different directions are respectively formed on the two masks, so that when the two masks When the plates are superimposed to define the hole array, the two lines on the two mask plate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/033H01L23/64
CPCH01L28/60H01L21/0332H01L21/0337H01L21/0338
Inventor 吴晗
Owner CHANGXIN MEMORY TECH INC