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Forming method of through hole array and forming method of semiconductor device

A semiconductor and array technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of formation, inability to completely cover the division, mask position deviation, etc.

Active Publication Date: 2020-04-17
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when the photolithography process is performed in combination with the masking mask, due to the limitation of the alignment accuracy of the photolithography process, it is very easy to have a positional deviation among the three masks, which will cause the masking mask to be in the masking grid. There is also a positional deviation at the boundary of the array, so that the undesired grid cannot be completely covered. After the undesired grid is exposed, it will further lead to the subsequent formation of undesired holes.

Method used

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  • Forming method of through hole array and forming method of semiconductor device
  • Forming method of through hole array and forming method of semiconductor device
  • Forming method of through hole array and forming method of semiconductor device

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Embodiment 1

[0092] image 3 It is a schematic flow chart of the method for forming the through-hole array in Embodiment 1 of the present invention, Figure 5a ~ Figure 13a with Figure 5b ~ Figure 13b It is a schematic diagram of the structure of the method for forming the through-hole array in the first embodiment of the present invention during its preparation. Each step of the forming method in this embodiment will be described in detail below with reference to the accompanying drawings.

[0093] In step S100, specifically refer to Figure 5a with Figure 5b As described above, a substrate 200 is provided, and the first mask layer 300 is formed on the substrate.

[0094] Wherein, an array area A is defined on the substrate 200 , and the through-hole array to be formed later is formed in the array area A. And, by forming the first mask layer 300 on the substrate 200, the pattern of the opening array can be defined on the first mask layer 300, and further copied to the substrate 20...

Embodiment 2

[0142] This embodiment provides a method for forming a semiconductor device, which uses the above-mentioned forming method to form a through-hole array, and further prepares a semiconductor device based on the formed through-hole array.

[0143] For example, the semiconductor device is a memory, and the memory includes a memory cell array and a capacitor array. Correspondingly, the memory cell array of the memory may be formed in a substrate, and a capacitor array is further formed through the through hole array formed in the substrate, and the capacitor array is correspondingly connected to the memory cell array.

[0144] Figure 14a ~ Figure 14c It is a schematic structural view of the method for forming a semiconductor device in Embodiment 2 of the present invention during its preparation process. The method for forming the semiconductor device in this embodiment will be described in detail below with reference to the accompanying drawings and taking forming a memory as an...

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Abstract

The invention provides a forming method of a through hole array and a forming method of a semiconductor device. The pattern of a first grid array is optimized through a second mask layer, the first grids and the second grids located at the edge positions in the first grid array are thus communicated with each other, equivalently, the first grids which are not expected to be formed are eliminated,alternatively, when the opening size of the first grid is relatively small, through combination with the second grid, the defect that a grid with a small opening size exists in the finally formed second grid array is overcome, and when the second grid array is copied into the substrate to form a through hole array subsequently, all through holes in the through hole array can be ensured to extend into the preset depth positions of the substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a through-hole array and a method for forming a semiconductor device. Background technique [0002] With the continuous advancement of semiconductor technology, the process nodes of semiconductor devices are constantly decreasing, which correspondingly makes the window of the photolithography process smaller and smaller. Based on this, a double-patterning lithography technique was proposed. For example, a denser hole array with a smaller size can be prepared by using double patterning lithography technology. [0003] Specifically, in the photolithography process used to define the hole array, it is usually necessary to use two masks, and two kinds of lines extending in different directions are respectively formed on the two masks, so that when the two masks When the plates are superimposed to define the hole array, the two lines on the two mask plate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/033H01L23/64
CPCH01L28/60H01L21/0332H01L21/0337H01L21/0338
Inventor 吴晗
Owner CHANGXIN MEMORY TECH INC