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Lithographic method

A technology of substrates and operating parameters, applied in the field of lithography, which can solve problems such as coverage errors

Active Publication Date: 2020-05-15
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, layers may be projected or exposed in positions that are not in line (i.e., misaligned) with the previously exposed pattern, resulting in so-called overlay errors

Method used

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Embodiment Construction

[0041] To help understand the principles applied in embodiments of the invention, first refer to figure 1 Describes lithographic equipment and how to use it.

[0042] figure 1 A lithographic apparatus according to an embodiment of the present invention is schematically shown. The apparatus comprises an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or any other suitable radiation); a support structure (e.g., a mask table) MT configured to support a patterning device ( For example, a mask) MA and is connected to a first positioning device PM configured to precisely position the patterning device according to certain parameters. The apparatus also includes a substrate table (e.g., wafer table) WT, or "substrate support," configured to hold a substrate (e.g., a resist-coated wafer) W and connected to a These parameters precisely position the second positioner PW of the substrate. The apparatus also includes a projection s...

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Abstract

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determininga quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to EP application 17193637.0 filed on September 28, 2017, EP application 18164511.0, filed on March 28, 2018, and EP application 18166720.5, filed on April 11, 2018, for its The entire content is incorporated herein by reference. technical field [0003] The present invention relates to a photolithographic method for fabricating devices. More particularly, the invention relates to a method for the measurement of substrate alignment in lithographic methods. Background technique [0004] Photolithographic methods are used to apply the desired pattern to the substrate, usually to a target portion of the substrate. Photolithography can be used, for example, in the manufacture of integrated circuits (ICs). In this case, a patterning device (which is alternatively referred to as a mask or reticle) may be used to generate a circuit pattern to be formed on the individual layers of the IC. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F9/00G03F7/20
CPCG03F9/7019G03F7/70633G03F9/7023G03F9/7046
Inventor P·A·J·廷尼曼斯E·M·休瑟博斯H·J·L·梅根斯A·K·埃达玛L·J·P·维尔希斯W·S·C·罗洛夫斯W·J·M·范德文H·亚古毕扎德H·E·瑟克里R·布林克霍夫T·T·T·乌M·R·古森M·范特维斯泰德寇伟田M·里杰普斯特拉M·科克斯F·G·C·比杰南
Owner ASML NETHERLANDS BV