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A group test device for nand Flash error rate

A test device and error rate technology, applied in the computer field, can solve the problems of uneven distribution of erasing and writing process, low accuracy of test results, etc., and achieve the effect of improving uniformity and accuracy

Active Publication Date: 2022-02-18
INSPUR SUZHOU INTELLIGENT TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of this application is to provide a grouping test device, method, equipment and readable storage medium of a NAND Flash error rate, in order to solve the uneven distribution of the erasing and writing process of the grouping test scheme of the current NAND Flash error rate, resulting in test results Problems with lower accuracy

Method used

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  • A group test device for nand Flash error rate
  • A group test device for nand Flash error rate
  • A group test device for nand Flash error rate

Examples

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Embodiment 1

[0055] A kind of NAND Flash error rate grouping test device embodiment one provided by the application is introduced below, see figure 1 , embodiment one includes:

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Abstract

This application discloses a group test device for NAND Flash error rate. From the perspective of the entire NAND Flash level, by ensuring that the product of the total number of erasing times and the time interval between different groups is equal, the time for each group to end erasing is shortened. point difference; from the perspective of a single group, the erasing and writing operation is performed on the corresponding group every time interval, which shortens the difference in the time point when different blocks in the same group end erasing and writing; from the perspective of a single block, Erase and write operations are performed on the corresponding group at intervals, which ensures that each Block performs erase and write operations at equal intervals. Therefore, based on the above three levels, the uniformity of the distribution of the erasing and writing process is improved, and the accuracy of the error rate test is improved. The present application also provides a NAND Flash error rate group testing method, equipment and readable storage medium, and its technical effect corresponds to the technical effect of the above-mentioned device.

Description

technical field [0001] The present application relates to the field of computer technology, in particular to a NAND Flash error rate grouping test device, method, equipment and readable storage medium. Background technique [0002] NAND Flash is a memory suitable for storing large amounts of data and is composed of Blocks. Every erasing and writing of NAND Flash will reduce its lifespan. If the lifespan of a block is up, the data in the block will be wrong and cannot be used reliably. Therefore, the error rate (bit error rate) of the block after being erased and written several times is obtained. very important. [0003] At present, the attenuation test of NAND Flash is generally carried out through a cyclic operation. First, multiple blocks are grouped, and the total number of times of erasing and writing of each group is set, and then the error rate of each group after different times of erasing and writing is obtained. For example, for MLC Blocks, if you want to know th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/56G11C16/34
CPCG11C29/56008G11C16/349
Inventor 王敏阚宏伟王彦伟
Owner INSPUR SUZHOU INTELLIGENT TECH CO LTD