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Evaluation method of temperature sensor

A temperature sensor and temperature detection technology, used in thermometer testing/calibration, thermometers, instruments, etc., can solve the problems of low efficiency and ineffective detection of temperature sensor test environment, and achieve the effect of improving test efficiency

Active Publication Date: 2022-06-03
WINBOND ELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of testing the environment, every time the temperature of the test environment is adjusted, it is necessary to wait for 2 hours of thermal equilibrium time, which causes the efficiency of the test environment of the temperature sensor to be low, and the resolution of the actual temperature sensed by the temperature sensor It is only ±3°C. In other words, if the temperature point at which the temperature sensor switches the self-refresh frequency is within the range of ±2°C of the specified temperature, the temperature sensor cannot be effectively detected during the test environment The temperature point at which the tor switches the self-refresh frequency

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  • Evaluation method of temperature sensor
  • Evaluation method of temperature sensor

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Embodiment Construction

[0022] figure 1 It is a block diagram of a temperature sensor according to an embodiment of the present invention. like figure 1 As shown, a temperature sensor 100 in a memory device or integrated circuit (eg, DRAM) includes a voltage divider 102 , a comparator 104 , a bandgap reference voltage source 106 , a diode 108 , and a controller 110 . The voltage divider 102 generates a plurality of divided voltages Vout[0:5] according to the power provided by the bandgap reference voltage source 106 , taking 6 divided voltages as an example, including a total of 6 voltages Vout[0]˜Vout[5] partial pressure. The bandgap reference voltage source 106 can also output a certain current 116 to flow through the diode 108 to generate a temperature-sensing reference voltage 112 that varies with temperature. The comparator 104 compares the temperature-sensing reference voltage 112 that varies with temperature with a plurality of divided voltages Vout[0:5] generated by the voltage divider 102...

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Abstract

An evaluation method of a temperature sensor, the temperature sensor is set in a memory device, and the temperature sensor includes a comparator, a voltage divider and a bandgap reference voltage source. The comparator compares a temperature-sensing reference voltage varying with temperature with a plurality of divided voltages generated by the voltage divider. The evaluation method includes: changing the multiple divided voltages of the voltage divider for multiple preset detection temperatures, and using the comparator to compare the multiple divided voltages with the temperature-sensing reference voltage, Obtain a first detection voltage corresponding to a first detection temperature; through a voltage difference between a target divided voltage and the first detection voltage, at the first detection temperature, obtain the sensing of the temperature sensor A first temperature error value between the temperature and the first detected temperature. The invention improves the testing efficiency of the temperature sensor, and can accurately know the actual temperature sensed by the temperature sensor.

Description

technical field [0001] The present invention relates to a temperature sensor, and more particularly, to an evaluation method of the temperature sensor provided in a memory device. Background technique [0002] Dynamic random access memory (Dynamic Random Access Memory: DRAM) has different self-update frequencies according to different temperatures in order to save power. ; The higher the temperature, the higher the self-renewal frequency, that is, a self-update is performed at a shorter interval. The DRAM adjusts the self-refresh frequency at different temperatures according to the temperature sensed by a temperature sensor inside the DRAM. If the error between the sensed temperature of the temperature sensor and the actual temperature is too large, the data stored in the DRAM will be lost due to an inappropriate self-refresh frequency. [0003] When evaluating the actual sensing temperature of the temperature sensor, the conventional test environment method requires the t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/00G01K15/00
CPCG11C29/838G01K15/007Y02D10/00
Inventor 杨轩任黄庭瀚
Owner WINBOND ELECTRONICS CORP