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Method for predicting graph density after splitting

A pattern density and split technology, applied in the semiconductor field, can solve the problem that the original layout and redundant patterns cannot accurately reflect the pattern density, and achieve the effect of close pattern density

Pending Publication Date: 2020-10-16
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for predicting the pattern density after splitting, which is used to solve the problem that the pattern density of the original layout and redundant patterns in the prior art cannot accurately reflect the pattern density before etching. Graphics Density Issues

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  • Method for predicting graph density after splitting
  • Method for predicting graph density after splitting
  • Method for predicting graph density after splitting

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Embodiment Construction

[0030] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0031] see Figure 1 to Figure 9 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides a method for predicting graph density after splitting. According to the invention, the method comprises the steps: respectively adding supplement values to an original layout and a redundant graph before splitting; performing double graph splitting on the original layout and the redundant graph after the complement values are added, and then performing the conventional OPC processing on the split original layout and the redundant graph, so that the graph density after splitting can be predicted more accurately, and the graph densities of the two photomasks after splitting are closer.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for predicting pattern density after splitting. Background technique [0002] The double graphics split is based on the original layout and redundant graphics, and can realize that the graphic densities of the original layout and redundant graphics in the two layers of graphics after splitting are basically the same. However, due to the fact that layers using double patterning technology generally have relatively large etching offsets, the pattern density of the original layout and redundant patterns cannot accurately reflect the pattern density before etching. [0003] Therefore, it is necessary to propose a new method for predicting the graph density after splitting to solve the above problems. Contents of the invention [0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for predicting the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36G03F7/20
CPCG03F1/36G03F7/70441G03F7/70508
Inventor 王丹于世瑞
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD