A kind of flash data writing method and device
A data writing and data technology, which is applied in electrical digital data processing, redundant code for error detection, instruments, etc., can solve the problems of increased time cost and long error correction time, and achieve the effect of saving time cost
Active Publication Date: 2021-07-13
SHENZHEN SANDIYIXIN ELECTRONICS CO LTD
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[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a method and device for writing Flash data, aiming to solve the technical problems of long error correction time and increased time cost of Nand Flash error correction algorithm in the prior art
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[0040] In order to make the object, technical solution and effect of the present invention more clear and definite, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. Embodiments of the present invention will be described below in conjunction with the accompanying drawings.
[0041] An embodiment of the present invention provides a method for writing Flash data. see figure 1 , figure 1 It is a flowchart of a preferred embodiment of a Flash data writing method of the present invention. Such as figure 1 As shown, it includes the steps:
[0042] Step S100: Detect the quality of the Flash through the first hardware algorithm, and judge whether the quality of the Flash meets the preset hardware requirements of the first hardware device, if yes, execute step S400, and if not, execute step S200;
[0043] Step S200...
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The invention discloses a method and device for writing Flash data. The method includes: detecting the quality of the Flash through a first hardware algorithm, and judging whether the quality of the Flash meets the preset hardware requirements of the first hardware device; If the quality of the Flash does not meet the preset hardware requirements of the first hardware device, the Flash parameter information is written into the designated location of the Flash; the Flash parameter information of the designated location of the Flash is read through the second hardware algorithm, and the Flash parameter information is written into In the second hardware device. If the quality of the Nand Flash does not meet the hardware requirements after processing on the first hardware algorithm, the embodiment of the present invention will write the flash related information into the designated location of the flash, and the second set of hardware algorithms will directly read the written algorithm It takes 2‑10 minutes to write to new hardware, saving time and cost.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a flash data writing method and device. Background technique [0002] Nand Flash memory is a kind of flash memory. It adopts nonlinear macro-cell mode inside, which provides a cheap and effective solution for the realization of solid-state large-capacity memory. Nand-flash memory has the advantages of large capacity and fast rewriting speed, and is suitable for storing large amounts of data, so it has been more and more widely used in the industry. [0003] At present, the mainstream Nand Flash error correction algorithms on the market include BCH, LDPC and so on. BCH code is an important type of error correction code, which divides the information sequence to be sent by the source into message groups according to a fixed κ bit group, and then independently transforms each message group into n (n>κ) binary Groups of digits are called codewords. The LDPC code i...
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IPC IPC(8): G06F11/10G11C29/42
CPCG06F11/1068G11C29/42
Inventor 钟金张辉罗祥君
Owner SHENZHEN SANDIYIXIN ELECTRONICS CO LTD