Reverse adjustment method for P-type polycrystalline silicon resistor and p-type diffusion region resistor in CMOS process

Abstract

The invention provides a reverse adjustment method for a P-type polysilicon resistor and a p-type diffusion region resistor in a CMOS process. The reverse adjustment method comprises the following steps of forming a diffusion region of the P-type diffusion region resistor; forming a polycrystalline silicon structure of the P-type polycrystalline silicon resistor; injecting fluorine ions with the energy of 8keV into the diffusion region and the polycrystalline silicon structure in the ion implantation process of the source and drain regions of the CMOS process; covering a layer of SAB structureon the polycrystalline silicon structure, and exposing two ends of the polycrystalline silicon structure; covering a layer of SAB structure on the diffusion region, and exposing two ends of the diffusion region; and forming contact holes in the exposed parts at the two ends of the polycrystalline silicon structure and in the exposed parts at the two ends of the diffusion region respectively. According to the invention, the energy of fluorine ion combined injection is adjusted in the forming process of the source and drain regions of an MOSFET device, and the grain size in the P-type polycrystalline silicon and the concentration distribution of boron ions in the diffusion region are changed at the same time, so that the reverse adjustment of the resistance values of the P-type polycrystalline silicon resistor and the P-type diffusion region resistor is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a reverse adjustment method for p-type polysilicon resistance and p-type diffusion region resistance in a CMOS process. Background technique [0002] Resistors are an important part of digital and analog CMOS integrated circuits, and their main functions are current limiting and voltage dividing. Resistors can be divided into active resistors and passive resistors. Active resistors usually use the resistance characteristics of transistors in a specific working area, while passive resistors are usually formed by doping, such as polysilicon resistors, diffused region resistors Wait. Because passive resistors are not affected by current and voltage and have stable performance, passive resistors are used in most integrated circuit designs. [0003] The resistance value of the passive resistor is mainly determined by the doping and heat treatment process. In the standard CMO...

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Problems solved by technology

[0004] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of P-type polysilicon resistance and p-type diffused area resistance reverse adjustment method in CMOS technology, be used to solve the problem of P-type polysilicon resistance in CMOS technology in the prior art. The problem that the resistance of the p-type diffusion region increases or decreases at the same time and the reverse adjustment of the resistance of the two resistances cannot be realized

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