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A method of optimizing electroless metal plating and structure with electroless metal plating

An electroless plating and metal technology, applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of abnormal color and morphology of electroless metal plating, and achieve the mitigation of adverse effects, deepening of grain boundaries, and reduction of etching. damage effect

Active Publication Date: 2021-02-12
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for optimizing electroless metal plating, to solve the problem that the color and appearance of the electroless metal plating formed in the existing process are prone to abnormal color and appearance

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  • A method of optimizing electroless metal plating and structure with electroless metal plating
  • A method of optimizing electroless metal plating and structure with electroless metal plating
  • A method of optimizing electroless metal plating and structure with electroless metal plating

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Embodiment Construction

[0019] As mentioned in the background art, when electroless metal plating is prepared on a substrate structure, abnormal color and shape of the electroless metal often occur. After research, the inventors of the present invention found that an important reason why the prepared electroless metal plating is prone to abnormalities is that the quality of the top metal layer below it is not good. Based on this, the inventors of the present invention have further studied the top metal layer below the electroless metal plating, and found that pollutants are likely to remain between the metal lattices (grain boundaries) in the top metal layer, and the pollutants are mainly in the preparation of organic passivation. remained in the top metal layer during the plating layer.

[0020] After creatively discovering the above technical content, the present invention provides a method for optimizing electroless metal plating, specifically referring to Figure 4 As shown, the method for optim...

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Abstract

The invention provides a method for optimizing electroless metal plating and a structure with electroless metal plating. By adjusting the preparation process of the inorganic passivation layer, the etching damage caused to the top metal layer during the preparation of the inorganic passivation layer is alleviated, and the organic material in the organic passivation layer is effectively prevented from remaining in the top metal layer, Improve the quality of the top metal layer, thereby providing a good growth environment for the electroless metal plating, and help to solve the problems such as abnormal color and shape of the formed electroless metal plating.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for optimizing electroless metal plating and a structure with electroless metal plating. Background technique [0002] In the integrated manufacturing of semiconductor devices and microelectronics, it is usually necessary to form a passivation layer on the substrate structure to protect the devices in the substrate structure, and to form metal contact pads on the substrate structure to electrically lead out the substrate structure. Semiconductor devices in the bottom structure, etc. [0003] specific reference Figure 1~Figure 3 As shown, in the existing process, the method of sequentially forming a passivation layer on the substrate structure and preparing a metal contact pad usually includes: first referring to figure 1 with figure 2 As shown, a passivation layer 20 is formed on the top metal layer of the substrate structure 10 to passivate the substrate str...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76802H01L21/76835H01L21/76879
Inventor 眭小超
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP