Memory device, recessed channel array transistor and manufacturing method thereof

Abstract

The disclosure provides a storage device, a recessed channel array transistor and a preparation method thereof, belonging to the technical field of storage. The preparation method of the recessed channel array transistor includes: forming a substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer stacked in sequence; implanting the first ion into the first semiconductor layer; implanting the first ion into the second semiconductor layer The second ion of the same type as the first ion, and the implantation dose is greater than the second ion; forming a groove channel opening in the third semiconductor layer and extending to the first semiconductor layer; implanting through the bottom of the groove channel and the first ion type The opposite third ion; the difference between the implantation dose of the first ion and the second ion is less than the implantation dose of the third ion; forming a gate insulating layer and a gate; implanting in the third semiconductor layer is opposite to the second ion type of the fourth ion. The preparation method of the recessed channel array transistor can improve the uniformity of the threshold voltage of the recessed channel array transistor.

Description

technical field [0001] The present disclosure relates to the field of storage technology, in particular to a storage device, a recessed channel array transistor and a manufacturing method thereof. Background technique [0002] With the continuous reduction of device size, recess channel access transistor (recess channel access transistor, RCAT) can be applied in DRAM (Dynamic Random Access Memory). However, as the size of the recessed channel array transistor decreases, the curvature effect of the trench channel is more obvious, resulting in a larger difference in the threshold voltage of the transistor at different positions in the trench channel, which reduces the performance of the recessed channel array transistor. . [0003] The above information disclosed in this Background section is only for enhancement of understanding of the background of the disclosure and therefore it may contain information that does not form the prior art that is already known in the art to a ...

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Problems solved by technology

However, as the size of the recessed channel array transistor decreases, the curvature effect of the trench channel is more obvious, resulting in a larger difference in the threshold voltage of the transistor at different positions in the trench channel, which reduces the performance of the recessed channel array transistor.

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