A method of manufacturing a semiconductor structure

Abstract

The present invention proposes a method for manufacturing a semiconductor structure, comprising: placing a substrate in a first etching chamber, the substrate including a pad oxide layer and a pad nitride layer; Injecting an etching gas into the substrate to etch the substrate to form at least one groove in the substrate, the groove extending from the pad nitride layer into the substrate; The substrate on which the trench has been formed is transferred from the first etching chamber to a second etching chamber, and the space between the first etching chamber and the second etching chamber is a vacuum state; oxygen gas is introduced into the second etching chamber to form oxygen plasma, and the oxygen plasma reacts with the substrate exposed by the groove, and the substrate exposed by the groove A lining oxide layer is formed on the surface of the substrate. The semiconductor manufacturing method proposed by the invention can improve manufacturing efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor structure. Background technique [0002] In today's semiconductor process technology, the Shallow Trench Isolation (STI) process is one of the most important and complex processes in the front-end process. Although this process has been widely used in the semiconductor manufacturing process technology below 0.25 microns, but With the continuous reduction of feature size, the process of shallow trench isolation structure is also continuously improved and developed. The basic requirement for the shallow trench isolation structure process is: when a large number of transistor devices are integrated into smaller and smaller chips, it can play a good role in insulating and isolating each tiny device, while not will affect the operating characteristics of these devices. [0003] When manufacturing a shallow trench isolation structure,...

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Problems solved by technology

Since the groove exposes the silicon substrate, a thin oxide layer will be formed on the silicon substrate, and when growing the insulating dielectric layer in the furnace tube, the oxide layer needs to be etched away first, and then the Oxide layer and insulating dielectric layer are formed in the groove, so this will lead to complex process and longer process time

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