Power device quality grade classification method

A power device, quality grade technology, applied in the field of grade classification

Active Publication Date: 2021-03-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the range of the current electrical parameter test standards is relatively wide, such as the I GSS (Gate source leakage current) parameter test standard is 0-100nA, and I GSS = 5nA and I

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Embodiment Construction

[0023] The specific implementation manners according to the present invention will be described below in conjunction with the accompanying drawings.

[0024] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, therefore, the present invention is not limited to the specific embodiments disclosed below limit.

[0025] Such as figure 1 As shown, a specific embodiment of the power device quality level classification method involved in the present invention is provided, including the following steps:

[0026] S100. Provide a batch of power devices;

[0027] It should be further explained that the power device may be any power device such as VDMOS (Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor), IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) or others.

[002...

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Abstract

The invention provides a power device quality grade classification method. The method comprises the steps of: providing power devices; performing a thermal response test and an electrical parameter test on the power device, and performing calculation to obtain a variable quantity; determining a standard value domain and an allowable change range, and judging whether a thermal response test resultand an electrical parameter test result meet the standard value domain or not; judging whether the variation exceeds an allowable variation range or not; establishing a quality grade classification standard, wherein the quality grade classification standard comprises a quality grade, the quality grade comprises a test index of a thermal response test, a test index of an electrical parameter test and a judgment index corresponding to a variable quantity, each test index and each judgment index correspond to a reference range, and each reference range corresponds to a score; based on the thermalresponse test result, the electrical parameter test result and the reference range to which the variable quantity belongs, endowing corresponding scores to the thermal response test result and the electrical parameter test result; summing the thermal response test result, the electrical parameter test result and the score corresponding to the variable quantity to obtain a total score; and performing grade classification based on the score and the total score.

Description

technical field [0001] The invention relates to the technical field of power device screening, in particular to a method for classifying power device quality grades. Background technique [0002] Before the power device is put into formal application, it is necessary to remove early failures or poor quality products in the batch. The specific removal method is to conduct various electrical parameter tests on the power device, and compare the test results of each electrical parameter with the test standards of each electrical parameter. For comparison, if the test results of all electrical parameters meet the test standards, it will be judged as a qualified power device; if one of the electrical parameter test results does not meet the test standards, it will be judged as an unqualified power device, and it will be removed from the batch removed. [0003] However, the range of the current electrical parameter test standards is relatively wide, such as the I GSS (Gate source...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2621G01R31/2628G01R31/2608G01R31/2619
Inventor 张宇隆苏洪源董晨曦王路璐郝乐刘梦新罗家俊韩郑生
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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