A non-destructive thinning method of materials excited by low-energy light

Abstract

The present invention relates to a non-destructive thinning method of materials excited by low-energy light, which comprises the following steps: growing two-dimensional materials in situ or transferring them from other supports to a target substrate; Surface defect density; control appropriate etching conditions; apply etching stimulus on the material to be thinned. The invention utilizes appropriate surface pretreatment to obtain different etching capabilities on the surface and inside of the material; the material still has lattice integrity and excellent physical properties after thinning; the thinning precision reaches the atomic level control level; the invention realizes the in-situ Directional etching capability, compatible with microelectronics process; using low-power etching excitation to improve process controllability.

Description

technical field [0001] The invention relates to the field of material precision machining, in particular to a non-destructive thinning method of materials excited by low-energy light. Background technique [0002] Two-dimensional materials have atomic-scale thickness and unique electrical, optical, and mechanical properties. For example, when the thickness is reduced to a single layer, MoS 2 The energy band of such semiconductor materials will undergo an indirect-direct characteristic transition and become an excellent light-emitting material. Secondly, the atomic-level thickness enables two-dimensional materials to effectively avoid short-channel effects in microelectronic devices, and is a potential channel material in the post-silicon era. Two-dimensional materials are expected to be used in the fields of microelectronics, optoelectronics, spintronics, energy conversion and memory. [0003] The current technology for large-scale fabrication and precise thickness contro...

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Problems solved by technology

[0008] Although the above thinning methods can achieve material thinning, they all have an obvious disadvantage: the etching of the top to-be-etched layer and the bottom reserved layer does not have good selectivity, which will cause damage and physical performance degradation to the reserved layer

Etching stimuli such as laser, plasma, and thermal oxidation are all high-energy substances or high-energy effects, and the two-dimensional material itself is only a few atomic layers thick. The layer to be etched is also easily transferred to the bottom reserved layer indiscriminately, causing damage to the lattice of the reserved layer, resulting in electrical mobility and optical performance degradation

The above literature pointed out that the monolayer MoS obtained by laser, plasma and thermal oxidation methods 2 The mobilities of the samples were approximately 0.04–0.49, 2 and 0.001 cm 2 ·V -1 ·s -1 , much lower than the high-quality monolayer samples obtained by mechanical exfoliation (20–30cm 2 ·V -1 ·s -1 ), indicating that the above method cannot perform non-destructive thinning and etching of the material

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