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Semiconductor structure

A technology of semiconductors and conductors, applied in the field of field effect transistor devices and their formation, can solve the problems of increasing process and manufacturing IC complexity

Pending Publication Date: 2021-03-30
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This miniaturization also increases the complexity of process and manufacturing IC
[0003] This miniaturization also increases process and manufacturing IC complexity, and similar developments in IC process and manufacturing are required in order to achieve these advances

Method used

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  • Semiconductor structure
  • Semiconductor structure
  • Semiconductor structure

Examples

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Embodiment Construction

[0077] The following provides a number of different embodiments or examples for implementing different components of an embodiment of the disclosure. Specific examples of components and configurations are described below to simplify embodiments of the present disclosure. Of course, these are just examples and are not intended to limit the embodiments of the present disclosure. For example, in the following description, it is mentioned that the first part is formed on or on the second part, which may include the embodiment in which the first part and the second part are formed in direct contact, and may also include the first part. An embodiment in which an additional part is formed between a part and a second part such that the first part and the second part may not be in direct contact. In addition, the embodiments of the present disclosure may repeat reference numerals and / or letters in various examples. This repetition is for purposes of simplicity and clarity, and is not...

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Abstract

A semiconductor structure includes a fin protruding from a substrate, a first and a second metal gate stacks disposed over the fin, and a dielectric feature defining a sidewall of each of the first and the second metal gate stacks. Furthermore, the dielectric feature includes a two-layer structure, where sidewalls of the first layer are defined by the second layer, and where the first and the second layers have different compositions.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device and its forming method, and in particular to a field effect transistor device and its forming method. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced several IC generations, each with smaller and more complex circuits than the previous generation. In the course of IC evolution, in general, functional density (i.e., the number of interconnected devices per chip area) increases while geometry size (i.e., the smallest component (or line) that can be created using a fabrication process) decreases . This miniaturization process typically provides benefits by increasing production efficiency and reducing associated costs. This miniaturization also increases the process and complexity of manufacturing ICs. [0003] This miniaturization has also increased t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L27/088H01L21/8234
CPCH01L29/785H01L27/0886H01L21/823431H01L21/823468H01L21/823481H01L21/764H01L21/76224H01L29/511H01L29/7851H01L21/31053H01L21/02271H01L29/401
Inventor 陈俊翰李振铭杨复凯王美匀
Owner TAIWAN SEMICON MFG CO LTD