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Method and device for measuring interstitial oxygen content of silicon single crystal rod

A technology of single crystal silicon rod and measurement method, which is applied in measuring devices, instruments, scientific instruments, etc., can solve the problem of undetectable oxygen content of single crystal silicon rod, and achieve the effect of avoiding judgment errors.

Active Publication Date: 2021-06-25
XIAN ESWIN MATERIAL TECH CO LTD +1
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Problems solved by technology

For the detection of the oxygen content in the gap between the single crystal silicon rods, the single crystal silicon rods are processed into silicon wafers and then sampled for testing. This has the problem that the oxygen content in some areas of the single crystal silicon rods cannot be tested.

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  • Method and device for measuring interstitial oxygen content of silicon single crystal rod
  • Method and device for measuring interstitial oxygen content of silicon single crystal rod
  • Method and device for measuring interstitial oxygen content of silicon single crystal rod

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Embodiment Construction

[0051] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0052] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the following will clearly and completely describe the technical solutions of the embodiments of the present invention in conjunction with the drawings of the embodiments of the present invention. Apparently, the described embodiments are some, not all, embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention belong to the protection scope of the present invention.

[0053] The test of interstitial oxygen content of semiconductor-grade lightly doped silicon wafers adopts the Fourier transform infrared method, wh...

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Abstract

The invention provides a method and a device for measuring the interstitial oxygen content of a single crystal silicon rod, and belongs to the technical field of semiconductors. The method for measuring the interstitial oxygen content of a silicon single crystal rod comprises the following steps of: measuring an interstitial oxygen content absorption coefficient at a preset position of a silicon single crystal rod to be measured by utilizing infrared rays along the length direction of the silicon single crystal rod; acquiring a calibration factor at a preset position of the silicon single crystal rod to be measured; and according to the calibration factor and the interstitial oxygen content absorption coefficient, calculating the interstitial oxygen content at the preset position of the silicon single crystal rod to be measured. By adopting the method and the device, the interstitial oxygen content of a silicon single crystal rod can be accurately measured.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method and device for measuring the oxygen content in the gap of a single crystal silicon rod. Background technique [0002] The Czochralski method is used for the growth of semiconductor single crystal silicon, and the interstitial oxygen mainly comes from the quartz crucible. According to the segregation mechanism, the distribution of oxygen in the single crystal silicon rod gradually decreases from the top to the bottom of the single crystal silicon rod, but Because oxygen gathers in the middle and lower part of the quartz crucible during the Czochralski growth process, the oxygen content at the tail of the single crystal silicon rod tends to rise. [0003] The test of the oxygen content in the interstitial space of semiconductor-grade lightly doped silicon wafers adopts the Fourier transform infrared method, which uses silicon wafers at 1107mm -1 The Fourier transfo...

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Application Information

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IPC IPC(8): G01N21/3563
CPCG01N21/3563G01N2021/3568
Inventor 兰洵全铉国
Owner XIAN ESWIN MATERIAL TECH CO LTD
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