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Ba-Co-V-based low-dielectric low-firing microwave ceramic material and preparation method thereof

A microwave ceramic and microwave dielectric ceramic technology is applied in the field of Ba-Co-V-based low-dielectric and low-fire microwave ceramic materials and their preparation, and can solve the problems of silver infiltration, inability to LTCC devices, unusable casting process, etc.

Active Publication Date: 2021-08-24
YANCHUANG PHOTOELECTRIC TECH GANZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ryosuke Umemura et al by adding burning aid B 2 o 3 , will Ba 3 (VO 4 ) 2 The sintering temperature is reduced to 925°C, τf is 27.4-66.1ppm / °C, but the Q*f value is reduced to 41,065GHz, and due to the introduction of sintering aid B 2 o 3 As a result, the post-casting process is unavailable, and silver seepage occurs when making device circuit patterns (the main reason is a large amount of B 2 o 3 The interaction between the sintering aid and the glass in the Ag paste) makes it impossible to really apply to the manufacture of LTCC devices

Method used

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  • Ba-Co-V-based low-dielectric low-firing microwave ceramic material and preparation method thereof
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  • Ba-Co-V-based low-dielectric low-firing microwave ceramic material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Use the following raw material components and their content to configure the material Ba 2.95 co 0.05 (VO 4 ) 2 :

[0028] Table 1: Formula table of embodiment 1 (unit: mol)

[0029] BaCO 3

[0030] (2) Calculate and weigh the raw materials according to the formula ratio in Table 1, and mix the raw materials by ball milling, drying, crushing and sieving, pre-sintering, granulation, molding, and sintering to obtain materials with excellent microwave dielectric properties and positive τf. The pre-firing temperature is 800°C, the molding pressure is 10MPa, the holding time is 30s, the sintering temperature is 950°C, the heating rate and cooling rate are 2°C / min, the heat preservation time is 64h, and the temperature is lowered to 700°C and then cooled naturally.

Embodiment 2

[0032] (1) Use the following raw material components and their content to configure the material Ba 2.9 co 0.1 (VO 4 ) 2 :

[0033] Table 2: Formula table of embodiment 2 (unit: mol)

[0034] BaCO 3

[0035] (2) Calculate and weigh the raw materials according to the formula ratio in Table 2. The raw materials are mixed by ball milling, drying, crushing and sieving, pre-sintering, granulation, molding, and sintering. The materials have excellent microwave dielectric properties and positive τf. The pre-firing temperature is 800°C, the molding pressure is 10MPa, the holding time is 30s, the sintering temperature is 950°C, the heating rate and cooling rate are 2°C / min, the heat preservation time is 64h, and the temperature is lowered to 700°C and then cooled naturally.

Embodiment 3

[0037] (1) Use the following raw material components and their content to configure the material Ba 2.85 co 0.15 (VO 4 ) 2 :

[0038] Table 3: Formula table of embodiment 3 (unit: mol)

[0039] BaCO 3

[0040] (2) Calculate and weigh the raw materials according to the formula ratio in Table 3, and mix the raw materials by ball milling, drying, crushing and sieving, pre-sintering, granulation, molding, and sintering to obtain materials with excellent microwave dielectric properties and positive τf. The pre-firing temperature is 800°C, the molding pressure is 10MPa, the holding time is 30s, the sintering temperature is 950°C, the heating rate and cooling rate are 2°C / min, the heat preservation time is 64h, and the temperature is lowered to 700°C and then cooled naturally.

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Abstract

The invention belongs to the technical field of electronic materials, and particularly relates to a Ba-Co-V-based low-dielectric low-sintering microwave ceramic material and a preparation method thereof, and the Ba-Co-V-based low-dielectric low-sintering microwave ceramic material is low in sintering temperature, has a high Q*f value and a positive [tau]f value, and can be applied to the technical field of LTCC (Low Temperature Co-Fired Ceramic). On the basis of Ba3(VO4)2 ceramic with high microwave dielectric property, a sintering reducing agent is not added, Ba<2+> in Ba3(VO4)2 is replaced by Co<2+> for the first time by adjusting the raw material ratio, and the Ba-Co-V-based low-dielectric microwave dielectric ceramic material with tau<f> of +14.5 ppm / DEG C to +23.8 ppm / DEG C and Q*f of 25318 GHz to 54063 GHz is obtained through low-temperature dense sintering at 900 DEG C to 950 DEG C through different substitution amounts; and as a sintering aid B2O3 is not added, the influence of later application in the LTCC field on a casting process is avoided, and the material can be effectively applied to the technical field of LTCC as a microwave dielectric ceramic [tau]f adjusting material.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to a Ba-Co-V-based low-medium-low-fire microwave ceramic material and a preparation method thereof, which has a low sintering temperature, high Q*f value and positive τf value, and can be applied to LTCC technology field. Background technique [0002] The rapid development of electronic communication, especially involving the increasing importance of microwave frequency band communication (300MHz ~ 300GHz), is widely used in mobile handsets, bluetooth, radar, radio and television and other fields. Therefore, with the development of microwave devices, the demand for microwave components such as resonators, filters, and dielectric antennas is also increasing. Microwave dielectric ceramics have a controllable size, and the integrated circuits composed of resonators and microstrip lines made of them can make the device size reach the order of millimeters, makin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/622C04B35/64
CPCC04B35/495C04B35/622C04B35/64C04B2235/3215C04B2235/3239C04B2235/3275C04B2235/656C04B2235/96
Inventor 李元勋杨昕彭睿陆永成苏桦
Owner YANCHUANG PHOTOELECTRIC TECH GANZHOU