Lateral double-diffused transistor

A technology of lateral double diffusion and transistors, which is applied in the direction of diodes, electric solid-state devices, semiconductor devices, etc., can solve problems such as device damage, achieve the effects of avoiding non-uniform opening, realizing anti-ESD ability, and improving anti-ESD ability

Active Publication Date: 2021-09-03
JOULWATT TECH INC LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a lateral double-diffused transistor, which is used to overcome the damage caused by non-uniform turn-on of the device when ESD pours in from the drain in the prior art, so as to improve the ESD resistance of the device

Method used

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Embodiment Construction

[0029] The present invention will be described in detail below in conjunction with various embodiments, but it should be noted that these embodiments are not limitations of the present invention, and those of ordinary skill in the art can make functional, method, or structural equivalent transformations or replacements based on these embodiments. , all fall within the protection scope of the present invention.

[0030] Such as image 3 As shown, an embodiment of the present invention provides a lateral double-diffused transistor, which includes: a substrate 1, a main part region 10 disposed on the substrate 1, and a main part region 10 also disposed on the substrate 1 and located in the main part region 10. Side accessories area 20. In the illustration, the accessory area 20 is located on the right side of the main area 10 , and in other implementations, the accessory area 20 can also be located on the left side of the main area 10 .

[0031] The master region 10 includes a ...

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Abstract

The invention provides a lateral double-diffused transistor. A main device region of the lateral double-diffused transistor comprises a first transistor, a second transistor and a first ESD device arranged between the first transistor and the second transistor; the first transistor and the second transistor have a connected source end, a connected drain end, a connected gate end and a connected body end; the first ESD device comprises a negative electrode connected to the connected gate end and two positive electrodes arranged on the left side and the right side of the negative electrode, and the two positive electrodes are connected to the connected source end; and an accessory region comprises a second ESD device, the input end of the second ESD device is connected to the connected gate end, and the output end of the second ESD device is grounded. According to the lateral double-diffused transistor, the damage caused by non-uniform opening of the device when the ESD inflows from the drain terminal in the prior art can be overcome, so that the ESD prevention capability of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a lateral double-diffusion transistor. Background technique [0002] In semiconductor power devices, MOS devices occupy an important position, among which double-diffused metal oxide semiconductor field effect transistor (Double-Diffused MOSFET, referred to as DMOS) is one of the most commonly used forms of power devices, DMOS devices are mainly divided into two types Types, vertical DMOS (referred to as VDMOS) and horizontal DMOS (referred to as LDMOS). LDMOS devices are voltage-controlled devices. Compared with bipolar devices, they have the advantages of high withstand voltage, high input impedance, good safe working area, and low power consumption. They are generally used in motor drives, automotive electronics, industrial control, and switches. It is used as a high-voltage power device in the power supply circuit. [0003] Ultra High Voltage Lateral Double Diffused ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L27/02
CPCH01L29/7816H01L29/7818H01L27/0251
Inventor 韩广涛王炜槐
Owner JOULWATT TECH INC LTD
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