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Device for acquiring 2D image and depth image of scene

A depth image and image technology, applied in the field of image acquisition devices, can solve problems such as complex integration

Pending Publication Date: 2021-09-28
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the problem is that depth pixels usually have much larger dimensions and / or much higher supply voltage than 2D image pixels, which complicates this integration

Method used

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  • Device for acquiring 2D image and depth image of scene
  • Device for acquiring 2D image and depth image of scene
  • Device for acquiring 2D image and depth image of scene

Examples

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Embodiment Construction

[0024] In the various drawings, like features have been indicated by like reference numerals. In particular, common structural and / or functional features between the various embodiments may have the same reference numerals and may be arranged with the same structure, dimensions and material properties.

[0025] For purposes of clarity, only those steps and elements that are useful for understanding the embodiments described herein have been shown and described in detail. In particular, the formation of photodiodes and circuits for controlling 2D image pixels and depth pixels is not described in detail, and the formation of such pixels is within the capabilities of those skilled in the art based on the teachings of this specification.

[0026] Unless otherwise indicated, when reference is made to two elements connected together, this means that there is no direct connection of any intermediate elements other than conductors, and when reference is made to two elements which are ...

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Abstract

The present specification relates to a device for acquiring a 2D image and a depth image, comprising: a first sensor (C1) formed inside and on top of a first semiconductor substrate (100) comprising a front surface and a rear surface, said first sensor (C1) comprising a plurality of 2D image pixels (P1) and a plurality of transmission windows (F), each transmissive window (F) comprising a portion (100F) of the first substrate and an amorphous silicon region (50) in contact with a rear surface of the portion (100F) of the first substrate (100); and a second sensor (C2) formed inside and on top of a second semiconductor substrate (130) opposite to the first sensor (C1) on the rear surface side of the first substrate, and including a plurality of depth pixels (P2) arranged opposite a transmission window (F) of the first sensor (C1).

Description

technical field [0001] The present application relates to an image acquisition device, and more particularly, to an image acquisition device capable of acquiring a 2D image and a depth image of a scene. Background technique [0002] Image capture devices capable of acquiring depth information have been provided. For example, a time-of-flight (ToF) detector is used to emit a light signal into a scene and then detect the return light signal reflected by objects in the scene. Through time-of-flight calculations of light signals, the distance between the acquisition device and objects in the scene can be estimated. As an example, the pixels of such sensors may use photodiodes of the SPAD type (Single Photon Avalanche Diodes). [0003] In some applications, it is desirable to be able to simultaneously capture a two-dimensional (2D) image of the scene and a corresponding depth image of the scene. [0004] While a solution to achieve this would be to use separate image sensors t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14634H01L27/14625H01L27/14643H01L27/1469H01L27/1462H01L27/14636H01L27/14627H01L27/14621H01L27/14629H01L25/043
Inventor 弗朗索瓦·德诺维尔
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES