Semiconductor device

Abstract

The embodiment of the invention provides a semiconductor device. The semiconductor device includes a first gate, a ferroelectric insulating layer on the first gate, a semiconductor device on the ferroelectric insulating layer, a gate dielectric layer on the semiconductor device, and a second gate on the gate dielectric layer.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices including ferroelectric layers. Specifically, embodiments of the present invention relate to a semiconductor device in which a ferroelectric layer and a gate dielectric layer are separated by a semiconductor channel element. Background technique [0002] The semiconductor integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits having smaller and more complex circuits than the previous generation. In the evolution of integrated circuits, functional density (eg, the number of interconnect devices per unit chip area) generally increases as geometric dimensions (eg, the smallest component or circuit that can be produced by the fabrication process employed) shrink. A shrinking process is often beneficial for increased throughput and lower associated costs. Sh...

AI Technical Summary

Problems solved by technology

Introducing ferroelectric layers in scaled ferroelectric field effect transistors presents additional challenges as gate trench dimensions shrink

Furthermore, the ferroelectric layer in ferroelectric field effect transistors is not thick enough to achieve a suitable cycle durability

Ferroelectric Field Effect Transistors are therefore generally suitable for their intended purpose, but not in all respects

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