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Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicals

A reaction chamber, free radical technology, applied in the field of clean reaction chamber, can solve problems such as production loss

Pending Publication Date: 2021-11-09
エーエスエムアイピーホールディングベーフェー
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This can cause significant downtime (approximately 1 week or more), resulting in significant production loss

Method used

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  • Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicals
  • Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicals
  • Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicals

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Embodiment Construction

[0017] While certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and obvious modifications and equivalents thereof. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specific disclosed embodiments described below.

[0018] As used herein, the term "substrate" may refer to any one or more underlying materials that may be used or materials on which devices, circuits, or films may be formed.

[0019] As used herein, the term "cyclic chemical vapor deposition" may refer to any process in which a substrate is sequentially exposed to one or more volatile precursors, which react and / or decompose on the substrate to produce a desired deposition.

[0020] As used herein, the term "atomic layer deposition" (ALD) may refer to a vapor deposition process in which a deposition cycle, preferably a plura...

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PUM

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Abstract

An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

Description

technical field [0001] The present disclosure generally relates to apparatus and methods for cleaning a reaction chamber after a film has been deposited on the interior walls of the reaction chamber. The present disclosure relates more particularly to the use of halogen-based radicals to perform cleaning or in situ etching of deposited films. Background technique [0002] Semiconductor fabrication processes for forming semiconductor device structures such as transistors, memory elements, and integrated circuits are wide-ranging and may include deposition processes. The deposition process can result in a film, such as molybdenum or molybdenum nitride, deposited on the substrate. [0003] Molybdenum or molybdenum nitride films can also accumulate on the inner walls of the reaction chamber during the deposition process. If too much of these films accumulates on the walls, there can be adverse effects such as drifting process performance due to temperature non-uniformity cause...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23F1/12
CPCC23C16/4405C23F1/12C23C16/06C23C16/452H01J37/32862H01J37/32357C23C16/4408C23C16/14C23C16/34C23C16/45553C23C16/505C23C16/45536C23C16/52
Inventor A.米什拉B.佐普S.斯瓦米纳坦T.G.M.奥斯特拉肯
Owner エーエスエムアイピーホールディングベーフェー