Preparation method of infrared micro-bridge detector with multilayer structure and infrared micro-bridge detector

Abstract

The invention relates to a preparation method of an infrared micro-bridge detector with a multilayer structure and the infrared micro-bridge detector. The preparation method comprises the following steps: preparing a CMOS (Complementary Metal Oxide Semiconductor) measurement circuit system and a CMOS infrared sensing structure by adopting a CMOS process; the step of preparing the CMOS infrared sensing structure comprises the substeps of preparing a first metal interconnection layer on top-layer metal of a CMOS measurement circuit system by adopting an RDL process or taking the top-layer metal of the CMOS measurement circuit system as the first metal interconnection layer; preparing a first interconnection column by adopting a through hole process and a CMP planarization process; depositing a second metal interconnection layer above the first interconnection column to form a beam structure; preparing a second interconnection column by adopting a through hole process and a CMP planarization process; and depositing a third metal interconnection layer and a second dielectric layer to form the absorption plate. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared micro-bridge detector are solved, and the performance of the infrared micro-bridge detector is optimized.

Description

Technical field [0001] The present invention relates to the field of infrared detection, particularly to a method for producing a multilayer structure microbridge infrared detectors and infrared microbridge detector. Background technique [0002] The field of market surveillance, and auxiliary car market, home market, the smart phone applications and manufacturing markets have a strong demand for uncooled high-performance chip, and the chip is good or bad performance, price and performance of products have a certain consistency requirements, the potential annual demand is expected to more than one hundred million chips, and the current scheme and the infrastructure can not meet market demand. [0003] Currently microbridge infrared detector using the measurement circuit, and a combination of infrared sensor structure, the measuring circuit using CMOS manufacturing process (Complementary Metal-Oxide-Semiconductor, complementary metal oxide semiconductor), and the infrared sensing ...

AI Technical Summary

Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present invention provides a preparation method of a multi-layer structure infrared micro-bridge detector and an infrared micro-bridge detector, which solves the performance problems of traditional MEMS technology infrared micro-bridge detectors. Low, low pixel size, low yield and poor uniformity, optimized the performance of infrared micro-bridge detectors

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