The invention relates to an infrared focal plane detector, a CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared focal plane detector are both prepared by using a CMOS process, in the infrared focal plane detector, a first columnar structure is located between a reflecting layer and a beam structure, a second columnar structure is located between an absorption plate and the beam structure, the first columnar structure and the second columnar structure are solid columnar structures, and the infrared focal plane detector further comprises a metamaterial structure and / or a polarization structure. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared focal plane detector are solved, the structural stability of the infrared focal plane detector is improved, the area of the absorption plate is increased, the infrared detection sensitivity of the infrared focal plane detector is improved, the absorption rate of the infrared focal plane detector to incident infrared electromagnetic waves is improved, the performance of the infrared focal plane detector is optimized, and the difficulty of optical design of the infrared focal plane detector is reduced.