Semiconductor device

A semiconductor and metal film technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as the impact of semiconductor device reliability, and achieve the effect of small parasitic resistance and suppression of cracks

Active Publication Date: 2015-02-11
SII SEMICONDUCTOR CORP
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, a crack 18 occurs in the insulating film 5 under the opening of the pad, which affects the reliability of the semiconductor device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0035] First, use figure 1 The pad structure of the semiconductor device of the present invention will be described. figure 1 (a) is a perspective view, (b) is a cross-sectional view, (c) is a plan view for explaining the relationship between the second metal film and the pad opening, and the uppermost metal film 3 is not shown.

[0036] Although not shown, elements are provided on the semiconductor substrate 11 . A first insulating film 10 is provided on a semiconductor substrate 11 , and a first metal film 1 is provided on the first insulating film 10 . The element and the first metal film 1 are electrically connected through the contact portion 12 . The second insulating film 4 is provided on the first metal film 1 , and the second metal film 2 is provided on the second insulating film 4 . The first metal film 1 and the second metal film 2 are electrically conn...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

In order to prevent chip size from being increased, while suppressing cracks below a pad opening, a protection film (6) has a pad opening (9) that exposes a part of a topmost layer metal film (3). The pad opening (9) is square, and the width of the opening is d0. A second metal film (2) has an opening below the pad opening (9). The opening is square, and the width of the opening is d4. The distance between the opening end of the protection film (6) and the opening end of the second metal film (2) is d3. The second metal film (2) has a rectangular ring shape, and protrudes to the inner side of the pad opening (9) by the distance d3.

Description

technical field [0001] The present invention relates to a semiconductor device having a pad structure. Background technique [0002] In order for the semiconductor device to exchange electrical signals with the outside, a wire bonding technique is used to connect pads of the semiconductor device and external connection terminals with metal wires. The wire bonding technique is a mechanical process of bonding a wire made of gold or the like to a pad of a semiconductor device using heat, ultrasonic waves, or a weight. Therefore, the semiconductor device may be damaged. use Figure 11 (a) and (b), explain this situation. The ballized wire 15 formed at the tip of the bonding wire 14 is crimped to the uppermost metal film 3 provided in the pad opening of the semiconductor device to form a crushed ball 16, and the bonding wire 14 is bonded to the uppermost layer of the pad opening. Metal film3. At this time, a crack 18 occurs in the insulating film 5 under the pad opening, which...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H01L21/3205H01L21/768H01L23/522
CPCH01L27/0296H01L2224/78301H01L2224/05096H01L2924/00014H01L24/05H01L2224/48463H01L24/85H01L2224/04042H01L2224/05014H01L2224/05085H01L24/78H01L2224/05095H01L2224/02166H01L2224/78303H01L2224/45144H01L23/522H01L2224/85181H01L2224/85205H01L2224/48451H01L2224/05011H01L2924/35H01L2224/05013H01L2224/05553H01L2224/05554H01L2224/05555H01L24/48H01L2224/05599H01L2224/05099H01L2924/00015H01L23/49827H01L23/5283H01L23/5226H01L23/60H01L24/45
Inventor 理崎智光中西章滋樱井仁美岛崎洸一
Owner SII SEMICONDUCTOR CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap