Composition for forming ferroelectric thin film, ferroelectric thin film and forming method thereof, and composite electronic assembly

A ferroelectric thin film and composition technology, which is applied in the direction of electrical components, circuits, capacitors, etc., can solve the problems of PZT thin film working hours increase, film cracking, etc., achieve high storage stability, reduce crystallization temperature, and improve composition uniformity Effect

Active Publication Date: 2014-03-26
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] However, in the paper shown in the above-mentioned conventional non-patent document 1, there is a disadvantage that in order to improve the insulating properties and ferroelectric properties of the PZT thin film and reduce the leakage current density, it is necessary to dope the PZT thin film with up to 1 atomic % of Ce, and the man-hours for making PZT films increase
Furthermore, in the method for forming the lead zirconate titanate composite perovskite film described in the above-mentioned conventional patent document 3, if the sol contains lead acetate instead of lead nitrate, when the film thickness of the composite perovskite film is thick, , leading to the problem of cracking in the film

Method used

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  • Composition for forming ferroelectric thin film, ferroelectric thin film and forming method thereof, and composite electronic assembly
  • Composition for forming ferroelectric thin film, ferroelectric thin film and forming method thereof, and composite electronic assembly

Examples

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preparation example Construction

[0037] The preparation method of the composition comprised in this way is demonstrated. For example, when preparing a composition for forming a PLZT film, first add a Zr compound (Zr source), a Ti compound (Ti source) and a stabilizer into a reaction vessel, and reflux in an inert atmosphere such as nitrogen at 80-200°C. The stabilizer is preferably contained in a ratio of 0.2 to 3 moles, more preferably in a ratio of 1 to 2 moles, based on 1 mole of the total amount of metals in the composition. That is, the stabilizer is contained so that (the number of molecules of the stabilizer) / (the number of atoms of the metal) is preferably 0.2-3, and more preferably 1-2. Among them, the reason why the mixing ratio of the above-mentioned stabilizer is limited to the range of 0.2 to 3 moles relative to 1 mole of the total amount of metals in the composition is that if it is less than 0.2 moles, the above-mentioned composition becomes insufficiently stable, so The storage stability of t...

Embodiment

[0047] Next, examples of the present invention will be described in detail together with comparative examples.

[0048]

[0049] First, tetra-n-butoxyzirconium (Zr source), isopropoxytitanium (Ti source), and lactic acid (stabilizer) were added into the reaction vessel, and refluxed in a nitrogen atmosphere. Next, lead acetate trihydrate (Pb source) and lanthanum acetate 1.5 hydrate (La source) were added to this compound, and propylene glycol (solvent) was added, and refluxed in a nitrogen atmosphere, and by-products were removed by vacuum distillation, Diluting alcohol was added to this solution to obtain a composition 1 containing a metal compound having a ratio of each metal of Pb / La / Zr / Ti of 125 / 3 / 52 / 48 and a concentration of 10% by mass in terms of oxide. However, the mixing ratio of lactic acid (stabilizer) was 2 moles relative to 1 mole of the total amount of metals in the composition. To this composition 1, polyvinylpyrrolidone (weight average molecular weight: 500...

Embodiment 2～4

[0051] Added polyvinylpyrrolidone at an additional percentage of 0.1 mol% (monomer conversion) relative to 100 mol% of the PLZT molecules contained in the composition 1 in the composition 1, and the weight average molecular weight is 10000, 50000 and 100000, Except for this, thin films were formed on the substrates in the same manner as in Example 1. These thin films are referred to as Examples 2, 3 and 4, respectively.

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Abstract

Cracking does not occur in a ferroelectric thin film even when Ce is not doped in a composition for forming ferroelectric thin films and a composition for forming relatively thick ferroelectric thin films contains lead acetate instead of lead nitrate. A ferroelectric thin film made of a titanate lead-based perovskite film or a titanate zirconate lead-based complex perovskite film is formed using the composition for forming ferroelectric thin films. The composition includes lead acetate, a stabilizing agent made of lactic acid and polyvinyl pyrrolidone. In addition, a monomer-equivalent molar ratio of polyvinyl pyrrolidone to a perovskite A site atom included in the composition is more than 0 to less than 0.015. Furthermore, a weight average molecular weight of the polyvinyl pyrrolidone is 5000 to 100000.

Description

technical field [0001] The present invention relates to a composition for forming a ferroelectric thin film suitable for high-capacity and high-density thin film capacitors, a method for forming the ferroelectric thin film, and a ferroelectric thin film formed by the method. Background technique [0002] Conventionally, a method for producing thin-film ferroelectrics has been disclosed: dissolving lead titanate (PT), zirconium-titanium, etc. A dielectric-forming precursor of lead acid (PZT) etc. is formed to form a dielectric-forming precursor solution, and the dielectric-forming precursor solution is applied to a metal substrate and dried to form a coating film of a dielectric-forming precursor , pre-firing at a temperature above the decomposition temperature of the organic matter in the coating film and below the crystallization temperature of the dielectric, and repeating the coating, drying and pre-firing of the dielectric-forming precursor solution, and then at a temper...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/491C04B35/622
CPCC04B35/472H01L21/02197H01L28/55C23C18/1216C04B35/493C04B35/632C04B35/6325C04B35/63444C04B2235/3227C04B2235/441C04B2235/449C04B2235/658C04B2235/6581C04B2235/6585H01L21/02282H01L21/02337Y10T428/3192Y10T428/31938H01B3/448H01B19/04
Inventor 藤井顺樱井英章曾山信幸
Owner MITSUBISHI MATERIALS CORP
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