The invention discloses a carbon-based film for inhibiting secondary
electron emission and a preparation method thereof. The film is composed of a
metal buffer layer and an
amorphous carbon film layer, wherein the thickness of the
metal buffer layer is 5-50 nm, the thickness of the
amorphous carbon film layer is 30-200 nm, the size of carbon particles in the
amorphous carbon film layer is 20-100 nm, and
metal materials in the metal buffer layer is
titanium,
molybdenum or
tungsten. The preparation method of the carbon-based film comprises the following steps that firstly, the metal buffer layeris deposited on a base in a metal target
sputtering mode under the condition that the temperature of the base is 400-600 DGE C; then, the amorphous
carbon film layer is deposited on the metal bufferlayer in a
graphite target
sputtering mode under the condition that the temperature of the base is 300-600 DGE C; and finally, the amorphous
carbon film layer is subjected to high-temperature annealing treatment or / and
sputtering treatment is carried out on the surface of the amorphous
carbon film layer by
argon ions. According to the carbon-based film prepared by the method, the content of sp2 bonds and the
surface roughness of an amorphous carbon film can be improved, so that the
secondary electron emission coefficient of the amorphous carbon film is reduced.