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Organic light emitting device and manufacturing method thereof

An electroluminescent device and electroluminescent technology, which can be applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as low luminous efficiency

Inactive Publication Date: 2014-12-03
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the luminous efficiency of organic electroluminescent devices is low at present

Method used

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  • Organic light emitting device and manufacturing method thereof
  • Organic light emitting device and manufacturing method thereof
  • Organic light emitting device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0036] Please also see figure 2 , the preparation method of the organic electroluminescent device 100 of an embodiment, it comprises the following steps:

[0037] Step S110 , sequentially vapor-depositing the hole injection layer 20 , the first hole transport layer 32 , the first light emitting layer 34 and the first electron transport layer 36 on the surface of the anode.

[0038] The anode 10 is indium tin oxide glass (ITO), aluminum zinc oxide glass (AZO) or indium zinc oxide glass (IZO), preferably ITO.

[0039] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pretreated. The pretreatment includes: performing photolithography on the anode 10, cutting it into the required size, using detergent, deionized Water, acetone, ethanol, and isopropanone were each ultrasonically cleaned for 15 minutes to remove organic pollutants on the surface of the anode 10 .

[0040] The hole injection layer 20 is formed on the s...

Embodiment 1

[0056] The structure prepared in this example is ITO / V 2 o 5 / NPB / BCzVBi / TPBI / MoO 3 / WO 3 : Ta 2 o 5 / PrO 2 / TAPC / BCzVBi / Bphen / CsF / Al organic electroluminescent device. Wherein, " / " indicates a stacked structure, and ":" indicates doping or mixing, and the following embodiments are the same.

[0057] First carry out photolithography treatment on ITO, cut it into the required size, and then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface; evaporate the hole injection layer , the material is V 2 o 5 , with a thickness of 40nm; vapor-deposited the first hole transport layer, made of NPB, with a thickness of 25nm; vapor-deposited the first light-emitting layer, made of BCzVBi, with a thickness of 20nm; 60nm; evaporated charge generation layer, n-type layer is MoO 3 , the thickness is 20nm, the middle layer material is WO 3 : Ta 2 o 5 , WO 3 with Ta 2 o 5 The mass rat...

Embodiment 2

[0062] The structure prepared in this example is AZO / MoO 3 / TCTA / ADN / TAZ / V 2 o 5 / MoO 3 :Nb 2 o 5 / Pr 2 o 3 / NPB / ADN / TAZ / CsN 3 / Pt organic electroluminescent devices.

[0063] First, the AZO glass substrate was washed with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface; the hole injection layer was prepared by evaporation, and the material was MoO 3 , the thickness is 80nm; the first hole transport layer is prepared by evaporation, the material is TCTA, and the thickness is 60nm; the first light-emitting layer is prepared by evaporation, the material is ADN, and the thickness is 5nm; the first electron transport layer is prepared by evaporation, and the material is TAZ, the thickness is 200nm; evaporated charge generation layer, n-type layer is V 2 o 5 , the thickness is 10nm, and the material of the middle layer is MoO 3 :Nb 2 o 5 , MoO 3 with Nb 2 o 5 The mass ratio is 1:20, the thickness is 30nm, a...

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Abstract

The invention discloses an organic light emitting device, which comprises an anode, a hole injection layer, a first hole transmission layer, a first light emitting layer, a first electron transmission layer, a charge generation layer, a second hole transmission layer, a second light emitting layer, a second electron transmission layer, an electron injection layer and a cathode stacked sequentially. The charge generation layer comprises an n-type layer, a middle layer, and a p-type layer, wherein the material of the n-type layer comprises bipolar metal oxide; the material of the middle layer is bipolar metal oxide doped with VB-family oxide; and the p-type layer is lanthanide oxide. The light emitting efficiency of the organic light emitting device is high. The invention also provides an organic light emitting device manufacturing method.

Description

technical field [0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] The luminescence principle of organic electroluminescent devices is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied molecular orbital (HOMO) of organic matter. Electrons and holes meet, recombine, and form excitons in the light-emitting layer. Excitons migrate under the action of an electric field, transfer energy to the light-emitting material, and excite electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to generate photons , releasing light energy. However, the luminous efficiency of organic electroluminescent devices is relatively low at present. Contents of the invention [0003]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K30/865H10K50/15H10K50/171H10K50/00H10K71/00
Inventor 周明杰王平黄辉陈吉星
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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