Infrared detector pixel and infrared detector based on CMOS process

Abstract

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, the pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure located on the CMOS measurement circuit system, and the CMOS measurement circuit system and the CMOS infrared sensing structure are prepared by adopting the CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures which are located on the CMOS measurement circuit system, the columnar structures are located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; the columnar structures adopt a non-metal solid column, the side wall of the non-metal solid column is made of a metal material, and a space surrounded by the side wall is filled with a non-metal material. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved; meanwhile, the columnar structures adopt the non-metal solid column so that the structural stability can be improved, and the detection performance can be improved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular to an infrared detector pixel and an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensi...

AI Technical Summary

Problems solved by technology

[0011] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector pixel and an infrared detector based on a CMOS process, which solves the problem of low performance and low pixel scale of traditional MEMS process infrared detectors. Low yield rate and other issues, while simultaneously achieving better structural stability and higher detection sensitivity

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