Magnetic memory and data erasing method thereof

A magnetic memory and data erasing technology, applied in the field of magnetic storage, can solve the problems of low security of MRAM storage data and low utilization efficiency of large-capacity data storage, and achieve the effect of erasing.

Pending Publication Date: 2022-02-18
致真存储(北京)科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Embodiments of the present invention provide a magnetic memory and a data erasing method thereof, so as to improve the low security of data stored in MRAM itself and the low efficiency of use in the process of storing large-capacity data

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic memory and data erasing method thereof
  • Magnetic memory and data erasing method thereof
  • Magnetic memory and data erasing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] In order to make the purpose, features and advantages of the present application more obvious and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described The implementation manner is only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0034] Those skilled in the art can understand that terms such as "first" and "second" in this application are only used to distinguish different devices, modules or parameters, etc., neither represent any specific technical meaning, nor represent the inevitable relationship between them. logical order.

[0035] Magnetic Random Access...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a magnetic memory and a data erasing method thereof, and relates to the field of magnetic memorizes. The magnetic memory comprises an erasing layer and magnetic tunnel junctions sequentially arranged on the erasing layer; the erasing layer is used for erasing stored data by changing the resistance state of the magnetic tunnel junctions; the magnetic memory structure further comprises an erasing line; the erasing line is of a line type structure, is arranged below the magnetic tunnel junctions and is used for replacing the erasing layer, and stored data are erased by changing the resistance state of the magnetic tunnel junctions. Therefore, according to the magnetic memory disclosed by the invention, the erasing layer or the erasing line is added below the magnetic tunnel junctions arranged on the magnetic memory, and the magnetic moment direction of the free layer in the magnetic tunnel junctions is changed through a field effect generated by the erasing device arranged on the erasing layer or the erasing line; therefore, the resistance state of the magnetic tunnel junctions and the conversion of the write-in information corresponding to the resistance state are influenced, and the erasing effect of the initial storage information is realized.

Description

technical field [0001] Embodiments of the present invention relate to the field of magnetic storage, and relate to a magnetic storage and a data erasing method thereof. Background technique [0002] Magnetic random access memory (MRAM, Magnetic Random Access Memory) based on magnetic tunnel junction (MTJ, Magnetic Tunnel Junction) has excellent characteristics such as fast read and write, non-volatility, and is expected to become the next generation of general-purpose memory. [0003] In the actual application of MRAM, it is found that due to the non-volatility of MRAM, it continues to store the data stored before power failure after power failure. At present, for erasing data stored in the MRAM, a method of writing new data to overwrite old data is usually adopted. Based on this, the possibility of historical storage data being read by others will increase, and data security will decrease. With the continuous improvement of MRAM storage capacity, the historical data erasur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16
CPCG11C11/1675G11C11/161
Inventor 金辉殷家亮
Owner 致真存储(北京)科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap