Semiconductor structure and forming method thereof

Abstract

The invention relates to a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure comprises the following steps of: providing a substrate; forming a dielectric layer with first grooves on the substrate; forming a first filling layer partially filling the first grooves; forming a first mask layer with first openings on the dielectric layer, the first openings exposing the first filling layer and part of the dielectric layer; etching the dielectric layer by taking the first mask layer as a mask to form second grooves; removing the first filling layer; and forming a conductive material in the first grooves and the second grooves. According to the embodiment of the invention, through a method of firstly forming the first grooves, partially filling the first grooves with the first filling layer, forming the second grooves and then removing the first filling layer, the height of the first filling layer can be matched with the arrangement density of the semiconductor structure, so that excessive transverse etching of the dielectric layer caused by an etching process is avoided, the short circuit phenomenon of the conductive material is avoided, and the electrical performance of the semiconductor structure is improved.

Description

Technical field [0001] The present invention relates to semiconductor technology, and more particularly to a method for forming a semiconductor structure. Background technique [0002] With the continuous development of semiconductor integrated circuit technology, integrated circuits distance between the conductive interconnect and the conductive interconnect dimensions continue to shrink, resulting in a conductive interconnect arrangement density correspondingly increased. With the increase of the density of the arrangement of conductive interconnect lines, is apt to cause short circuit between the conductive interconnect lines, resulting in decreased performance or even failure of the semiconductor device. Inventive content [0003] Based on this, it is necessary for the semiconductor structure is apt to cause short circuit problem, there is provided a semiconductor structure and method of forming. [0004] A method for forming a semiconductor structure, comprising: [0005] P...

AI Technical Summary

Problems solved by technology

[0003] Based on this, it is necessary to provide a semiconductor structure and its forming method for the problem that the semiconductor structure is prone to short circuit phenomenon

Images