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Dynamic reconfigurable RAM (Random Access Memory) read-write mode

A dynamic and patterned technology, applied in the direction of static memory, information storage, digital memory information, etc., can solve the problems of single use mode and difficult implementation of data storage scheme in hardware circuits, and achieve the effect of great flexibility and multi-expanded applications

Pending Publication Date: 2022-04-08
井芯微电子技术(天津)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, the reading and writing method of RAM is the sequential reading and writing of a single RAM, and its usage method is relatively simple, which makes it difficult for some data storage schemes to be implemented on hardware circuits.

Method used

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  • Dynamic reconfigurable RAM (Random Access Memory) read-write mode
  • Dynamic reconfigurable RAM (Random Access Memory) read-write mode
  • Dynamic reconfigurable RAM (Random Access Memory) read-write mode

Examples

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Embodiment 1

[0029] combine Figure 1-4 As shown, a dynamic reconfigurable RAM reading and writing method, on the basis of the original sequence of reading and writing RAM, add the reading and writing method of storing two RAMs according to the odd and even elements, and store the two RAMs according to the upper and lower triangular elements respectively. The read and write mode, the read and write mode of storing two RAMs in odd and even rows, and the read and write mode of storing in RAM in row order.

[0030] Taking data matrix storage as an example, the four storage methods are described. In the following description, i and j respectively represent the row number and column number of the data in the matrix, starting from 0; I and J represent the number of rows and columns of the data matrix, starting from 1; base_addr represents the RAM start address of data storage.

[0031] (1) In the described row-by-row sequence storage to RAM mode, a matrix is ​​stored by row and completely store...

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PUM

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Abstract

The invention discloses a dynamic reconfigurable RAM (Random Access Memory) read-write mode, which is characterized in that on the basis of an original sequential read-write RAM, a read-write mode of respectively storing two RAMs according to odd and even elements, a read-write mode of respectively storing two RAMs according to upper and lower triangular elements, a read-write mode of respectively storing two RAMs according to odd and even rows and a read-write mode of respectively storing two RAMs according to a row sequence are added. The change of the RAM read-write mode can be realized through the arrangement of the register, so that the reconfigurability of the RAM read-write mode is realized on the hardware circuit level.

Description

technical field [0001] The invention relates to the technical field of RAM reading and writing methods, in particular to a dynamically reconfigurable RAM reading and writing method. Background technique [0002] Random access memory (random access memory, RAM), also known as "random access memory", is an internal memory that directly exchanges data with the CPU, also called main memory (memory). It can be read and written at any time, and the speed is very fast, and it is usually used as a temporary data storage medium for operating systems or other running programs. The content of the storage unit can be taken out or stored at will as needed, and the speed of access has nothing to do with the location of the storage unit. In the development of FPGA and ASIC, the use of RAM is usually involved, such as temporary storage and cache of data, and construction of FIFO. Usually, the reading and writing method of RAM is the sequential reading and writing of a single RAM, and its ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/22
CPCG11C7/22
Inventor 朱珂王永胜林谦顾艳伍赵金萍储志博
Owner 井芯微电子技术(天津)有限公司
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