Variable pattern light emitting diode, preparation method thereof and reflective sighting telescope

A technology of light-emitting diodes and graphics, applied in the field of sight light sources, can solve the problems of low utilization rate of light sources, and achieve the effects of improving the yield, overcoming the low yield of the die, and designing reasonable preparation steps.

Pending Publication Date: 2022-04-12
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, since most of the light emitted by the LED light source is blocked by the reticle, only a small amount of light is emitted, so its light source utilization rate is low.

Method used

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  • Variable pattern light emitting diode, preparation method thereof and reflective sighting telescope
  • Variable pattern light emitting diode, preparation method thereof and reflective sighting telescope
  • Variable pattern light emitting diode, preparation method thereof and reflective sighting telescope

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] S1: Take substrate 1, grow N-type ohmic contact layer 2, N-type confinement layer 3, active region 4, P-type confinement layer 5 and P-type ohmic contact layer 6 sequentially on the surface of substrate 1 by MOCVD method to obtain epitaxy piece;

[0076] S2: Place the epitaxial wafer with the N side down and the P side up in the electron beam evaporation table, and evaporate the ITO film transparent conductive layer 7 on the P-type ohmic contact layer 6, and the ITO film covers the entire surface of the epitaxial wafer; the thickness of the ITO film is for

[0077] S3-1: Place the epitaxial wafer P on the suction cup of the coating machine, coat the photoresist, and expose the light-emitting pattern A (circle) of the light-emitting area A, and the light-emitting pattern B (circle) of the light-emitting area B, the circle Concentric with the ring, the circle is located at the center of the ring; development and etching are then carried out, and at this time, light-emi...

Embodiment 2

[0088] S1: Take substrate 1, grow N-type ohmic contact layer 2, N-type confinement layer 3, active region 4, P-type confinement layer 5 and P-type ohmic contact layer 6 sequentially on the surface of substrate 1 by MOCVD method to obtain epitaxy piece;

[0089] S2: Place the epitaxial wafer with the N side down and the P side up in the electron beam evaporation table, and evaporate the ITO film transparent conductive layer 7 on the P-type ohmic contact layer 6, and the ITO film 7 covers the entire surface of the epitaxial wafer; where the ITO film Thickness is

[0090] S3-1: Place the epitaxial wafer P on the suction cup of the coating machine, coat the photoresist, and expose the light-emitting pattern A (circle) of the light-emitting area A and the light-emitting pattern B (circle) of the light-emitting area B. Said circle is located at the center of the ring, and the circle is concentric with the ring; development and etching are carried out again, and at this time, ligh...

Embodiment 3

[0100] As described in Embodiment 1, the difference is that in step S4, the P-side electrode A and the P-side electrode B are only located in the light-emitting region, and the two through holes penetrate the active region 4 in step S6. LED structure such as image 3 shown. Luminous graphics such as Figure 7 shown.

[0101] Luminescence experiment:

[0102] Take any one of the light-emitting diodes prepared in Examples 1-3, and after lighting up, a specific light-emitting pattern can be generated, and the replacement of the light-emitting pattern can be selected according to the conduction selection of the P-surface electrode during use, and it can be completed at the same time as packaging and bonding Soldering wire, excellent when used in reflex sights.

[0103] After the light-emitting diode is manufactured, the P-side electrode A is turned on, and the generated light-emitting pattern is a dot ( Figure 6 , Figure 7 left figure); turn on the P surface electrode B, t...

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Abstract

The invention discloses a variable pattern light-emitting diode and a preparation method thereof and a reflective sighting telescope, the variable pattern light-emitting diode is characterized in that a transparent conducting layer is arranged on the upper surface of an epitaxial wafer, a plurality of light-emitting areas are arranged on the transparent conducting layer, an etching area is arranged outside the transparent conducting layer, a P-surface electrode is correspondingly arranged on each light-emitting area, and a P-surface electrode is arranged on the P-surface electrode. And the P-surface electrode extends to the N surface through a through hole penetrating through the epitaxial wafer. The invention also provides a preparation method and application of the light-emitting diode chip. The reflective sighting telescope takes the light-emitting diode with the variable patterns as a light source, and does not need a reticle. And the light source utilization rate and the LED reliability are improved.

Description

technical field [0001] The invention relates to a variable-pattern light-emitting diode, a preparation method thereof and a reflective sight, belonging to the technical field of sight light sources. Background technique [0002] The reflective sight is a kind of optical sight without magnification. It uses the principle of spherical reflection to make the reflected light incident on the eyes parallel to the observer's eyes, so that the observer's eyes can be seen without being on the central axis of the lens. Seeing the red dot can improve shooting accuracy when moving targets or body movement. The light source part of the reflective sight currently includes laser light source, LED / LD light source, isotope radiation light source and so on. [0003] The isotope radiation source uses the visible light radiated by a radioactive element as the light source. Although its lifespan is very long, the cost is relatively high. The LED / LD light source is to place a circular or other ...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L33/38H01L33/08H01L33/44H01L33/00F41G1/14
Inventor吴向龙闫宝华彭璐王成新徐现刚
OwnerSHANDONG INSPUR HUAGUANG OPTOELECTRONICS