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Distributing ECC bits to allocate ECC bits for metadata

A technology of metadata and data parts, which is applied in the field of data storage and system management of error correction bits, and can solve problems such as large data bandwidth

Pending Publication Date: 2022-07-29
INTEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Upcoming memory device standards anticipate more internal prefetching and longer burst lengths to result in greater data bandwidth per memory device access transaction (e.g., read or write)

Method used

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  • Distributing ECC bits to allocate ECC bits for metadata
  • Distributing ECC bits to allocate ECC bits for metadata
  • Distributing ECC bits to allocate ECC bits for metadata

Examples

Experimental program
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Embodiment Construction

[0020] As described herein, the memory subsystem includes a plurality of memory resources connected in parallel, including a first memory resource and a second memory resource. The memory subsystem may partition a portion of data into sub-portions. Divided into smaller parts, the system requires fewer ECC (Error Checksum Correction) bits to provide the same level of ECC protection. Splitting data into subsections for storage in parallel memory resources may be referred to as split line access. The portion of data may include N ECC bits for error correction, and each sub-portion may include a sub-portion of (N-M) ECC bits for error correction. The system can then use the M bits of data for non-ECC purposes, such as metadata.

[0021] DRAM (Dynamic Random Access Memory) devices compatible with the upcoming double data rate version 5 (DDR5) standard of JEDEC (Joint Electron Device Engineering Council, now JEDEC Solid State Technology Association) Can have 4 data bus signal lin...

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PUM

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Abstract

The present disclosure generally relates to distributing ECC bits to allocate ECC bits for metadata. The memory subsystem includes a plurality of memory resources connected in parallel, including a first memory resource and a second memory resource. The memory subsystem may divide a portion of data into a plurality of sub-portions. Segmentation into smaller portions requires fewer ECC (Error Check and Correction) bits to provide the same level of ECC protection. The portion of data may include N ECC bits for error correction, and each sub-portion may include a sub-portion of (N-M) ECC bits for error correction. The system may then use M bits of data for non-ECC purposes, such as metadata.

Description

technical field [0001] The description relates generally to memory systems and, more particularly, to data storage and system management of error correction bits. Background technique [0002] Increasing memory device densities and operating speeds, combined with smaller feature sizes of memory device manufacturing processes, tend to lead to an increase in runtime errors for memory devices. Memory systems employ error checking and correction (ECC) to correct errors that might otherwise lead to system failure. DRAM (dynamic random access memory) devices are often used in modules such as DIMMs (dualinline memory modules), which include multiple DRAM devices connected in parallel . Memory systems using DIMMs are often expected to provide single device data correction (SDDC), where failures of the entire DRAM device of the DIMM can be corrected. [0003] Upcoming memory device standards anticipate more internal prefetching and longer burst lengths to result in greater data ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/10G11C29/42G11C29/52G06F3/06
CPCG06F11/1044G06F11/1008G11C29/42G11C29/52G06F3/0679H03M13/19G06F11/1048G06F11/1068
Inventor 拉贾特·阿加瓦尔陈巍比尔·纳勒詹姆士·A·麦考尔
Owner INTEL CORP