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Electromagnetic noise eliminator, semiconductor device using the eliminator and making method thereof

A semiconductor and device technology, applied in the field of semiconductor substrates, which can solve problems such as inefficiency

Inactive Publication Date: 2006-12-06
TOKIN CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the situation has arisen that means that the traditional lumped constant circuit's means of blocking noise are ineffective

Method used

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  • Electromagnetic noise eliminator, semiconductor device using the eliminator and making method thereof
  • Electromagnetic noise eliminator, semiconductor device using the eliminator and making method thereof
  • Electromagnetic noise eliminator, semiconductor device using the eliminator and making method thereof

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Embodiment Construction

[0071] First, before describing the embodiments of the present invention, in order to facilitate the understanding of the present invention, a prior art semiconductor wafer will be described with reference to FIGS. 1-5 .

[0072] Referring to Figures 1A, 1B and 1C, semiconductor die are fabricated, eg, using generally known wafer fabrication techniques. The semiconductor wafer 27 has a plurality of chip wafers 29 each having an integrated circuit (not shown) formed on its surface and each having a chip electrode 31 (electrode pad) formed thereon. The shown chip electrode 31 is formed along the outer circumferential edge of the chip wafer 29 , but the chip electrode 31 may be formed in the active region. Aluminum alloys are generally used as metals that form chip electrodes. The semiconductor wafer 27 also includes a passivation film 33 . More specifically, the entire surface of the semiconductor wafer 27 is covered with the passivation film 33 . The passivation film 33 is c...

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Abstract

In a semiconductor bare chip (57) on the front surface whereof is formed an integrated circuit, a magnetic loss film 55 is formed on the back surface of that semiconductor bare chip.

Description

technical field [0001] The present invention relates to semiconductor substrates, which are used in the manufacture of various semiconductor devices for industrial and daily use, and to semiconductor bare chips and semiconductor wafers with integrated circuits formed on their surfaces, and in particular to electromagnetic wave absorbing semiconductor substrates for noise suppression A substrate, a manufacturing method thereof, and a semiconductor device manufactured using the semiconductor substrate. [0002] The present invention also relates to an electromagnetic noise suppressing body exhibiting outstanding high-frequency electromagnetic noise suppressing effects, in particular to an electromagnetic noise suppressing body capable of effectively suppressing electromagnetic noise, which is harmful to electronic devices and electronic equipment operating at high speed or high frequency Active devices are problematic and involve high-frequency electromagnetic noise suppression ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/552H01L23/58H01F41/14H01F1/047H01L27/04H01L21/00H01L23/66
CPCH01L2224/274H01L2223/6627H01L23/66H01L2924/01019H01L2924/3011H01L2924/19032H01L23/552H01L21/00
Inventor 吉田荣吉小野裕司栗仓由夫根本道夫山中英二山口正洋岛田宽
Owner TOKIN CORP