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Utilization of electric silicon fuse assembly

A technology of silicon fuse and electrical silicon, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of polysilicon fuse burning to bursting, polysilicon fuse bursting, etc.

Active Publication Date: 2007-07-04
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Due to the existing pulse voltage used to blow electrical silicon fuses, the maximum voltage value is V IH The allowable error range of the process is very small, and usually needs to be controlled below 5%, and exceeding this range will cause the polysilicon fuse to burst
Also, even setting the highest voltage value to V IH Controlled within the aforementioned process allowable error range, there will still be a phenomenon that the polysilicon fuse is burned to burst
It can be seen that the blowing method of the electrical silicon fuse of the prior art still has defects and room for further improvement

Method used

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  • Utilization of electric silicon fuse assembly
  • Utilization of electric silicon fuse assembly
  • Utilization of electric silicon fuse assembly

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Embodiment Construction

[0026] Please refer to FIGS. 2 to 4, wherein FIG. 2 shows a schematic diagram of an equivalent circuit of an electrical silicon fuse assembly 10 according to the present invention; FIG. 3 shows a schematic plan view of a polysilicon fuse; FIG. 4 shows a diagram The schematic cross-sectional view of the polysilicon fuse in 3 along the tangent line I-I. As shown in FIG. 2, the electrical silicon fuse assembly 10 includes a polysilicon fuse 12 and a transistor 14 connected in series with the polysilicon fuse 12, wherein the MOS transistor 14, such as an NMOS transistor, includes a gate 141, which is arranged in a channel region, and two drain / source (S / D) regions 142 separately disposed on both sides of the gate structure 141 . The gate 141 of the MOS transistor 14 is connected to the gate pulse voltage (V g ), and by controlling the gate voltage, a high current Ids can be passed through the polysilicon fuse 12 in a short time (less than 1 second), thereby blowing the polysilico...

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Abstract

An application of an electric Si fuse module with a polysilicon fuse features that its one end is serially connected to the drain / source of a MOS transistor, its another end is connected with a voltage of fuse source (VFS), and said MOS transistor has a grid connected to a grid pulse voltage (Vg). Said grid pulse voltage consists of preheating pulse voltage VP1 the highest pulse voltage V1H and the lowest pulse voltage VIL.

Description

technical field [0001] The invention relates to a method for using an electric silicon fuse (e-fuse), in particular to a method for blowing the electric silicon fuse with a multi-level pulse voltage. Background technique [0002] As the integration level of semiconductor memory components increases, correspondingly, the yield rate of products may decrease. This is due to the complexity and difficulty of semiconductor manufacturing steps, and it is inevitable that components will be defective due to the introduction of contamination factors such as particles in the process steps or the back-end packaging process. In order to improve the yield rate, the prior art uses a method called redundancy circuit to obtain the desired yield rate of the semiconductor memory device. [0003] The aforementioned redundant circuit includes a plurality of polysilicon fuses (poly-fuse). If a defective memory is found after testing the main memory array, the corresponding polysilicon fuse in th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/525
Inventor 陈贝翔
Owner UNITED MICROELECTRONICS CORP