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Mfg. method of lining processor and semiconductor device

A technology of substrate processing device and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, ion implantation plating, etc., and can solve problems such as lengthening

Inactive Publication Date: 2003-02-19
KOKUSA ELECTRIC CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the current manufacturing line of semiconductor devices as the mainstream Figure 7 In the case of the shown vertical device (that is, the reaction tube is arranged in the vertical direction), due to the problem of restricting the height of the clean room where the device is installed, such as Figure 7 As shown, the length of the furnace core tube does not simply become longer in the vertical direction

Method used

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  • Mfg. method of lining processor and semiconductor device
  • Mfg. method of lining processor and semiconductor device
  • Mfg. method of lining processor and semiconductor device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0030] figure 1 is a schematic sectional view showing a substrate processing apparatus of the present invention, figure 2 yes means figure 1 A cross-sectional view of a portion of the substrate processing apparatus shown, image 3 yes means figure 1 A cross-sectional view of a portion of the substrate processing apparatus shown, Figure 4 yes means figure 1 A perspective view of a portion of the substrate processing apparatus shown, Figure 5 yes means figure 1A perspective view of a portion of the substrate processing apparatus shown. As shown in the figure, a main heater 22 for substrate heating is installed outside an outer tube (soaking tube) 21 made of SiC, and a cylindrical inner tube (reaction tube) made of quartz is installed inside the outer tube 21. 23. A liftable cover 24 made of quartz is inserted into the inner sleeve 23, and a port 25 is mounted on the cover 24, and a plurality of semiconductor substrates (not shown) are held on the port 25. Moreove...

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PUM

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Abstract

A substrate processing apparatus and a method for manufacturing a semiconductor device can supply the vapor of the raw material to the substrate without fail. A main heater 22 is prepared outside the outer tube 21, an inner tube 23 is prepared inside the outer tube 21, a cap 24 that can be lifted and lowered is inserted in the inner tube 23, a boat 25 is mounted on the cap 24, a raw material sublimation portion 46 and a heat insulating portion 36 are prepared on the cap 24, a heater portion 45 is set up with possible attachment and detachment on the cap 24, a sublimation heater 26 of the heater portion 45 is located inside the reaction chamber, a raw material loading board 34 of the raw material sublimation portion 46 is prepared on the upper portion of the sublimation heater 26, a plurality of pole members 35 are prepared around the raw material loading board 34, the heat insulation portion 36 is supported by the pole member 35, and the heat insulating portion 36 is located between the raw material sublimation portion 46 and the substrate processing area, and the heat insulating portion 36 is packed with a quartz wool.

Description

technical field [0001] The present invention relates to a sublimation antimony oxide (Sb 2 o 3 ) and other raw materials are provided to a substrate such as a semiconductor substrate and a method for manufacturing a semiconductor device. Background technique [0002] Figure 7 is a schematic cross-sectional view showing a conventional substrate processing apparatus. As shown in the figure, a heater 2 is arranged outside the outer casing 1, an inner casing 3 is arranged inside the outer casing 1, a liftable cover 4 is inserted into the inner casing 3, and a port is installed on the cover 4. 5. A plurality of semiconductor substrates (not shown) are held in the port 5 . In addition, a raw material sublimation device 6 is arranged outside the outer casing 1 and the inner casing 3, that is, outside the furnace, and one end of the raw material introduction pipe 7 is connected to the raw material sublimation device 6, and the other end of the raw material introduction pipe 7 is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/225C23C14/08C23C14/24C23C14/56H01L21/02H01L21/22
CPCC23C14/564C23C14/08C23C14/24H01L21/02
Inventor 谷山智志远目塚幸二柳川周作
Owner KOKUSA ELECTRIC CO LTD