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Method for raising processing range with eliminating auxiliary characteristic

An auxiliary feature and range technology, which is applied in the direction of the original photomechanical processing, the photoplate process of the pattern surface, optics, etc., and can solve the problem of residual printing on the wafer

Inactive Publication Date: 2003-08-20
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the application of such resist features often results in unwanted residual print on the wafer

Method used

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  • Method for raising processing range with eliminating auxiliary characteristic
  • Method for raising processing range with eliminating auxiliary characteristic
  • Method for raising processing range with eliminating auxiliary characteristic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] figure 1 Shown is an exemplary lithographic projection apparatus suitable for use with the present invention to remove AF, the apparatus comprising:

[0031] A radiation system Ex, IL provides the projection beam PB of radiation. In particular, said radiation system also includes a radiation source LA;

[0032] A first target table (mask table) MT is provided with a mask holder for supporting a mask MA (eg reticle), connected to a first positioning device for precisely positioning the corresponding data item PL mask ;

[0033] A second target table (substrate table) WT-substrate support table supports a substrate W (for example, a silicon wafer coated with resist), connected with a second positioning device for precise positioning of the corresponding data item PL substrate;

[0034] A projection system ("lens") PL (eg refractive, reflective or catadioptric optical system) is used to image the irradiated portion of mask MA onto target portion C of substrate W (eg com...

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PUM

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Abstract

A method of transferring a lithographic pattern onto a substrate by use of a lithographic apparatus. The method includes the steps of: (1) defining features to be printed on the substrate; (2) determining which of the features require assist features to be disposed adjacent thereto in order for the features to be printed within defined resolution limits; (3) generating a mask containing the features to be printed and the assist features; (4) performing a first illumination process so as to print the features on the substrate, the first illumination process resulting in the partial printing of the assist features on the substrate; and (5) performing a second illumination process so as to reduce the amount of the assist features printed on the substrate; the second illumination process entails the step of performing a quadrapole illumination.

Description

technical field [0001] The present application relates to lithography and in particular to a method of optical approximation correction used during the development of a lithographic mask for a lithographic apparatus comprising: [0002] a radiation system for providing a radiation projection beam; [0003] a support device supporting a patterning device, the patterning device providing a patterned projection beam according to a desired pattern; [0004] a substrate table on which the substrate is placed, and [0005] A projection system is used to project the pattern beam to the target portion of the substrate. Background technique [0006] The term "patterning device" as used herein should be interpreted broadly as a device capable of imparting a patterned cross-section to an incident radiation beam, wherein said pattern corresponds to a pattern to be formed on a target portion of a substrate; the term is also used herein "light valve". Typically, the pattern correspond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00G03F7/20H01L21/027
CPCG03F1/144G03F7/70441G03F7/70125G03F7/70466G03F1/36G03F1/70H01L21/027
Inventor J·F·陈D·-F·S·苏M·F·A·厄林斯
Owner ASML NETHERLANDS BV