Semiconductor light-emitting device and its manufacturing method

一种发光元件、制造方法的技术，应用在半导体激光器、半导体激光器装置、光波导半导体的结构等方向，能够解决难以熔融大口径基板表面、发光波长不稳定、难以形成多个形状一致凹部等问题
CN1602569AInactive Publication Date: 2005-03-30PANASONIC CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
PANASONIC CORP
Publication Date
2005-03-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

A semiconductor light emitting device of the present invention comprises a n-type InP substrate (1), and a stripe structure (10) formed in the stripe shape on the n-type InP substrate (1) and comprised of a n-type InP lower cladding layer (3), an active layer (4) having a resonator in a direction parallel to the n-type InP substrate (1), and a p-type InP upper cladding layer (5). The stripe structure (10) has a photonic crystal structure (2) with concave portions 9 arranged in rectangular lattice shape, and the direction in which the concave portions (9) of the photonic crystal structure (2) are arranged corresponds with a resonator direction. A stripe-shaped upper electrode (6) is formed on the stripe structure (10) to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate (1).
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Description

technical field

[0001] The present invention relates to a surface emission type semiconductor light emitting element using a photonic crystal grown on a substrate and a manufacturing method thereof. Background technique

[0002] Conventional semiconductor light-emitting elements using photonic crystals are disclosed, for example, in (Japanese) Unexamined Patent Publication No. 11-330619, Japanese Unexamined Publication No. 2001-308457, and Japanese Unexamined Publication No. 2001-9800 (US Patent Publication No. 2002 / 0109134 No. Specification), JP-A-63-205984 (US Patent No. 4847844 Specification), JP-A-2002-062554, etc.

[0003] In addition, similarly, it is also disclosed in 'Imada: Appl. Phys. Lett. 75 (1999) 316'. figure 1 It is a perspective view showing the structure of a conventional semiconductor light-emitting element using the photonic crystal disclosed in this "Imada". like figure 1 As shown, on an n-type InP substrate 51, an n-type InP photonic crystal layer 52,...

Claims

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