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Semiconductor device producing method

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of inability to obtain the reliability of insulating films, deterioration, degradation of semiconductor device performance and reliability, etc.

Inactive Publication Date: 2005-11-16
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] However, when some insulating materials are heated to a temperature of 350°C or higher in the curing process, the structure of the basic skeleton of the insulating film becomes uneven depending on the location, so that the relative permittivity of the insulating film varies depending on the location. class of membrane degradation
As a result, reliability as an insulating film cannot be obtained, and the performance and reliability of semiconductor devices are greatly reduced.

Method used

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  • Semiconductor device producing method
  • Semiconductor device producing method
  • Semiconductor device producing method

Examples

Experimental program
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no. 1 example

[0092] Hereinafter, referring to FIGS. 1(a) to (d) and FIGS. 2(a) to (c), a method of manufacturing a semiconductor device according to the first embodiment will be described.

[0093] First, as shown in FIG. 1(a), after a step layer 11 is formed on a substrate 10 made of a semiconductor wafer, a fluid substance, such as a liquid or gelatinous substance, is supplied to the step layer 11 to form a flow性膜12A. In addition, the planar shape of the substrate 10 is not particularly limited, and may be any shape such as a circular shape or a polygonal shape.

[0094]However, generally, in order to evaporate a part or most of the solvent in the fluid film 12A formed on the substrate 10, a heat treatment of about 80°C to 120°C is performed. This heating is generally referred to as pre-baking, and the temperature of the pre-baking may be set to such a degree that the fluidity of the fluid film 12A can be ensured in the planarization step performed next. That is, the temperature may be set a...

no. 2 example

[0113] Hereinafter, referring to FIGS. 1(a) to (d) and FIGS. 2(a) to (c), a method of manufacturing a semiconductor device according to the second embodiment will be described.

[0114] The basic processing sequence of the second embodiment is almost the same as that of the first embodiment, so the following description will focus on the differences from the first embodiment.

[0115] First, as in the first embodiment, after the step layer 11 is formed on the substrate 10, after the fluid film 12A is formed on the step layer 11, the pressing member 13 is pressed against the fluid film 12A to make the fluid film 12A The surface is flattened across the entire surface.

[0116] Next, by heating the fluid film 12A to the first temperature (T1) in a state where the pressing member 13 is pressed against the fluid film 12A, a cured film 12B having a flat surface is formed.

[0117] Next, after the pressing member 13 is detached from the cured film 12B, the cured film 12B is fired by heat...

no. 1 Embodiment

[0124] Hereinafter, with reference to Figs. 4(a) to (c), the first spin coating method, which is a method of forming the fluid film used in the first and second embodiments, will be described.

[0125] First, as shown in FIG. 4(a), after the substrate 21 is held by vacuum suction on the rotatable loading table 20, an appropriate amount of a liquid substance 23 is dropped on the substrate 21, and then the loading table 20 rotate, or as shown in FIG. 4(b), after the substrate 21 is held by vacuum suction on the rotatable loading table 20, while the loading table 20 is rotated to further rotate the substrate 21, the dropping nozzle 24 A substance 23 having fluidity is supplied onto the substrate 21.

[0126] In this way, as shown in FIG. 4(c), a fluid film 22 is formed on the substrate 21.

[0127] In either the method shown in FIG. 4(a) or the method shown in FIG. 4(b), by optimizing the viscosity of the fluidized substance 23 and the rotation speed of the loading table 20, it is poss...

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Abstract

A semiconductor producing method comprises a step for forming on a substrate a flowable film of an insulation material having flowability, a step for flattening the surface of the flowable film by pressing the flat pressing surface of a pressing member against the flowable film, a step for forming a solidified film whose surface is flat by heating the flowable film to a first temperature with the pressing surface held pressed against the flowable film, so as to solidify the flowable film whose surface is flattened, and a step for forming a fired film whose surface is flat by heating the solidified film whose surface is flat to a second temperature higher than the first temperature to fire the solidified film.

Description

Technical field [0001] The present invention relates to a method of manufacturing a semiconductor device having an insulating film with a flat surface. Background technique [0002] In recent years, semiconductor integrated circuit devices have been able to process fine design specifications of about 100 nm or less. [0003] In order to form a finer photoresist pattern by a photolithography technique using light, the wavelength of exposure light must be shortened. [0004] However, as the wavelength of the exposure light becomes shorter, the depth of focus is greatly reduced at the same time, so it is necessary to always flatten the surface of the insulating film formed on the substrate. For this reason, when manufacturing a semiconductor device with a fine design specification of 100 nm or less, the planarization technology of the insulating film on the substrate becomes a very important technology. [0005] Currently, in semiconductor devices with a fine design specification of...

Claims

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Application Information

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IPC IPC(8): H01L21/3105H01L21/312H01L21/316H01L21/768
CPCH01L21/76828H01L21/3124H01L21/3122H01L21/316H01L21/02203H01L21/02282H01L21/76825H01L21/76885H01L21/31051H01L21/02216H01L21/31058H01L21/02126H01L21/76819H01L21/76826H01L21/312H01L21/302H01L21/31
Inventor 中川秀夫笹子胜平井义彦
Owner PANASONIC CORP