Circuit device
A technology for circuit devices and conductive layers, which is applied to circuits, circuit substrate materials, printed circuit components, etc., and can solve problems such as poor thermal expansion coefficient, large thermal expansion coefficient difference of IC chip 104, and peeling of resin layers
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[0041] Embodiments of the present invention will be described below with reference to the drawings.
[0042] First, refer to figure 1 and figure 2 The structure of the hybrid integrated circuit device of this embodiment will be described.
[0043] In the hybrid integrated circuit device of this embodiment, such as figure 2 As shown, a substrate 1 having a multilayer structure (three-layer structure) having a thickness of about 100 μm to about 3 mm (for example, about 1.5 mm) was used. This substrate 1 is composed of a lower metal layer 1a made of copper, an intermediate metal layer 1b made of a Fe-Ni alloy (so-called iron-nickel alloy) formed on the lower metal layer 1a, and an intermediate metal layer 1b formed on the lower metal layer 1a. The cladding material of the upper metal layer 1c composed of copper is formed. The lower metal layer 1a and the upper metal layer 1c made of copper have a thermal expansion coefficient of about 12 ppm / °C. In addition, the intermedi...
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Abstract
Description
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