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Mask, method for producing the same, deposition method, electronic device, and electronic apparatus

A film-forming method and technology of manufacturing method, which are applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of inability to form wiring patterns, difficult to form complex shapes of wiring patterns, etc., to ensure electrical conductivity, low cost Manufacture, the effect of good electrical conductivity

Inactive Publication Date: 2005-12-28
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the problem with the above technology is that the pattern of the mask is limited to simple shapes such as rectangles and circles. For example, it is difficult to form complex shapes such as wiring patterns, and in particular, it is impossible to further form wiring patterns in frame-shaped wiring patterns. line pattern

Method used

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  • Mask, method for producing the same, deposition method, electronic device, and electronic apparatus
  • Mask, method for producing the same, deposition method, electronic device, and electronic apparatus
  • Mask, method for producing the same, deposition method, electronic device, and electronic apparatus

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Embodiment Construction

[0032] Embodiments of a mask, a mask manufacturing method, a film forming method, an electronic device, and an electronic device according to the present invention will be described below with reference to the drawings.

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Abstract

The present invention provides a mask for forming a complicated circuit wiring pattern by a mask film-forming method, a method for manufacturing the mask, and the like. Corresponding to the pattern opening portion (12) that is opened on the mask matrix material (11), in the mask (10) that forms a thin film pattern on the film-formed substrate by vapor phase growth method, in the pattern opening portion (12) ), in the mask matrix material (11), at a certain distance from the opposite surface (11a) of the substrate to be filmed, there is a beam (14) connecting the side walls (13) of the pattern opening portion (12) to each other.

Description

technical field [0001] The present invention relates to a mask or the like for forming an arbitrary wiring pattern on a substrate by a vapor phase growth method or the like. Background technique [0002] Techniques for forming electrical wiring on a substrate using photolithography, dry etching, and wet etching techniques have been used for many years. However, very expensive equipment is required for photolithography and etching, and the cost of the product increases due to the influence of management costs and yield of several processing steps. Furthermore, since a large amount of resist, developer, resist stripper, and etchant (gas) is consumed, the surrounding environment is affected. When the substrate is uneven and holes or grooves are formed, it is difficult to form a resist film, and it is impossible to form a high-precision pattern. [0003] Therefore, as disclosed in Japanese Unexamined Patent Publication No. 4-236758, a technique is proposed, that is, a mask on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/04
CPCC23C14/042H05B33/10
Inventor 四谷真一
Owner SEIKO EPSON CORP