Power type light-emitting diode device and its manufacturing method
A light-emitting diode and power-type technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc. Chip device manufacturing methods and other issues
Inactive Publication Date: 2006-09-06
ELECTRICITY FACILITIES GUANGRI GUANGZHOU CO LTD
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Problems solved by technology
At present, the main disadvantages of high-power manufacturing technology are: (1) the cost and price of single-chip high-power LEDs are relatively high; (2) the technology of multi-chip high-power LED devices is not perfect; (3) there is no manufacturing of multi-chip devices (4) There is no manufacturing method for multi-chip devices, and mass production cannot be carried out
Method used
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[0021] according to figure 1 The device is fabricated with the structure shown
[0022] (1) Use semiconductor MOCVD technology or epitaxial diffusion technology or ion implantation technology to prepare photoresistor on semiconductor substrate or metal substrate or ceramic substrate, or directly weld the finished photoresistor on the substrate;
[0023] (2) encapsulating a plurality of light-emitting diode chips respectively on the substrate to form a plurality of series circuits;
[0024] (3) Multiple sets of series circuits are sequentially connected to voltage compensation thermistors, photoresistors, and parameter resistors; the voltage compensation thermistor is used to compensate for the increase and decrease of the series circuit voltage due to changes in temperature; the photoresistor and parameter resistance are connected in series or The photosensitive coefficient is changed in parallel to measure the luminous intensity of the LED chip. When the luminous intensity ...
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The present invention relates to a power type LED device manufacturing method. It contains utilizing semiconductor MOCVD technology or epitaxial diffuse technology or ion implantation to prepare photoresistor on semiconductor substrate, or directly soldering finished product photoresistor on substrate, respectively packaging plurality of LED chip on substrate to form multibank series circuit, multibank series circuit in turn connected with voltage compensation thermistor, photoresistor, and parameter resistor. Device made by said method can display voltage applied on LED in every series circuit, circuit corresponded compensating resistance value, and said series circuit voltage after soldering device, and device having series-parallel circuit and voltage thermal compensation property.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a multi-chip power type light emitting diode device prepared on a substrate, packaged and welded, and a manufacturing method thereof. Background technique [0002] The technology of high-brightness light-emitting diode chips manufactured by techniques such as metal organic vapor phase epitaxy (MOCVD) is basically mature, but the technology of manufacturing high-power light-emitting diode chips and devices is not mature enough. Using multiple high-brightness light-emitting diode chips to manufacture a high-power device has relatively good advantages. At present, the main disadvantages of high-power manufacturing technology are: (1) the cost and selling price of single-chip high-power LEDs are relatively high; (2) the technology of multi-chip high-power LED devices is not perfect; (3) multi-chip devices are not manufactured (4) There is no manufacturing method for multi-chip ...
Claims
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IPC IPC(8): H01L21/60H01L25/16G01R19/00
CPCH01L2224/48091H01L2224/48137H01L2924/00014
Inventor 郭志友范广涵孙慧卿
Owner ELECTRICITY FACILITIES GUANGRI GUANGZHOU CO LTD