Power type light-emitting diode device and its manufacturing method
A light-emitting diode, power-type technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the high cost and price of single-chip high-power light-emitting diodes, and there is no voltage and current compensation technology for multi-chip devices , There are no problems such as multi-chip device manufacturing methods
Inactive Publication Date: 2008-11-12
ELECTRICITY FACILITIES GUANGRI GUANGZHOU CO LTD
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Problems solved by technology
At present, the main disadvantages of high-power manufacturing technology are: (1) the cost and price of single-chip high-power LEDs are relatively high; (2) the technology of multi-chip high-power LED devices is not perfect; (3) there is no manufacturing of multi-chip devices (4) There is no manufacturing method for multi-chip devices, and mass production cannot be carried out
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[0021] according to figure 1 The structure shown in the fabrication device
[0022] (1) Use semiconductor MOCVD technology, epitaxial diffusion technology or ion implantation technology to prepare photoresistors on semiconductor substrates, metal substrates or ceramic substrates, or directly weld the finished photoresistors on the substrate;
[0023] (2) Packaging a plurality of light-emitting diode chips on the substrate to form multiple sets of series circuits;
[0024] (3) Multiple sets of series circuits are sequentially connected to voltage compensation thermistors, photoresistors, and parameter resistors; voltage compensation thermistors are used to compensate for the increase and decrease in series circuit voltage due to temperature changes; photoresistors and parameter resistors are connected in series or Changing the photosensitivity coefficient in parallel is used to measure the luminous intensity of the LED chip. When the luminous intensity decreases, the resistan...
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The present invention relates to a power type LED device manufacturing method. It contains utilizing semiconductor MOCVD technology or epitaxial diffuse technology or ion implantation to prepare photoresistor on semiconductor substrate, or directly soldering finished product photoresistor on substrate, respectively packaging plurality of LED chip on substrate to form multibank series circuit, multibank series circuit in turn connected with voltage compensation thermistor, photoresistor, and parameter resistor. Device made by said method can display voltage applied on LED in every series circuit, circuit corresponded compensating resistance value, and said series circuit voltage after soldering device, and device having series-parallel circuit and voltage thermal compensation property.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a multi-chip power light-emitting diode device for preparing a photoresistor on a substrate, packaging and welding, and a manufacturing method thereof. Background technique [0002] The high-brightness light-emitting diode chip technology manufactured by metal organic vapor phase epitaxy (MOCVD) method is basically mature, but the technology of manufacturing high-power light-emitting diode chip and device is not mature enough. Manufacturing a high-power device with a plurality of high-brightness light-emitting diode chips has relatively good advantages. At present, the main disadvantages of high-power manufacturing technology are: (1) the cost and price of single-chip high-power LEDs are relatively high; (2) the technology of multi-chip high-power LED devices is not perfect; (3) there is no manufacturing of multi-chip devices (4) There is no manufacturing method for multi-c...
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IPC IPC(8): H01L21/60H01L25/16G01R19/00
CPCH01L2224/48091H01L2224/48137H01L2924/00014
Inventor 郭志友范广涵孙慧卿
Owner ELECTRICITY FACILITIES GUANGRI GUANGZHOU CO LTD