Mass TDMA complex switching chip data processing method

A technology of time division multiplexing and switching chips, applied in time division multiplexing systems, multiplexing communications, electrical components, etc., can solve the problems of high cost, complex implementation and control, poor reliability, etc. Low, simple to implement and control, high reliability

Active Publication Date: 2011-05-04
HUAWEI TECH CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To this end, it is necessary to use a large-capacity TDM switching chip, but using the existing technology to realize a large-capacity TDM switching network requires cascading multiple TDM switching chips or using a "TST" three-level switching network, and completing a TDM build The network process needs to configure the switching table memory of multiple TDM switching chips, the implementation and control are relatively complicated, and the cost is high and the reliability is poor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mass TDMA complex switching chip data processing method
  • Mass TDMA complex switching chip data processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The core of the present invention is that the write data bit width of the input memory is 8, and the read data bit width is 8 × m; the write data bit width of the output memory is 8 × m, and the read data bit width is 8; the input memory and The output memory simultaneously completes the functions of data buffering and bit width conversion, and the switching module processes a bit width of 8×m, so that the capacity of the TDM switching chip is m times that of the prior art solution.

[0021] The specific embodiment of the device of the present invention is as shown in Figure 2, the structure of described high-capacity TDM switch chip device comprises: serial / parallel converter, parallel / serial converter, input memory, output memory, exchange module and swap table memory;

[0022] The connection relationship between the modules included in the device will be further described below in conjunction with the data input and output processing process:

[0023] The device rec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The method thereof comprises: in TDM chip, a series / parallel converter converts the series TDM bit-stream into the parallel data in an 8 bits bit-wide; the input memory implements the buffering / bit-wide conversion for the data, namely converting the parallel data in 8 bits bit-wide into the parallel data in 8*m bit-wide; the parallel / series converter converts the parallel data in 8 bits bit-wide into the TDM bit-stream; the output memory implements the buffering / bit-wide conversion, namely converting the parallel data in 8*m bit-wide into the parallel data in 8 bits bit-wide, and implements relevant TDM switch.

Description

technical field [0001] The invention relates to a communication system data exchange element, in particular to a data processing method of a large-capacity time-division multiplexing exchange chip. Background technique [0002] TDM (Time Division Multiplexing) has been widely used in existing modern communication systems. The functional block diagram of the existing TDM switching chip is shown in Figure 1. The input TDM signal is written into the input memory after the serial / parallel conversion of the serial / parallel converter; the switching module is based on the configuration data read from the switching table memory. The data read from the input memory is written into the corresponding address of the output memory to complete the TDM exchange; the data read from the output memory becomes the output TDM signal after the parallel / serial conversion of the parallel / serial converter. [0003] The design scheme of the TDM switching chip in the above-mentioned prior art can we...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H04J3/00H04J3/08
Inventor 涂君雷春潘剑锋柳精伟
Owner HUAWEI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products