Extraction Method of Single π Symmetry Model Parameters of Silicon-Based On-Chip Spiral Inductor Equivalent Circuit

An equivalent circuit model, a technology of spiral inductance, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., to achieve the effect of good repeatability, simplicity and feasibility, and high accuracy

Inactive Publication Date: 2011-12-21
S TEK SHANGHAI HIGH FREQUENCY COMM TECH
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  • Description
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  • Application Information

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Problems solved by technology

The present invention will solve the problem of multiple values ​​and non-optimal solutions that cannot be fundamentally avoided in the iterative and fitting method of extracting the equivalent circuit model parameters of the chip spiral inductor in the world at present.

Method used

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  • Extraction Method of Single π Symmetry Model Parameters of Silicon-Based On-Chip Spiral Inductor Equivalent Circuit
  • Extraction Method of Single π Symmetry Model Parameters of Silicon-Based On-Chip Spiral Inductor Equivalent Circuit
  • Extraction Method of Single π Symmetry Model Parameters of Silicon-Based On-Chip Spiral Inductor Equivalent Circuit

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Embodiment Construction

[0056] exist figure 1 , the circuit model can be divided into the following three parts: the first part Y s (10) including L s (11), R s (12), C s (13); the other two parts Y sub1 (20), Y sub2 (20) are exactly the same, including C respectively si (21), R si (22), C ox (twenty three). Here Y s =-Y 12 , Y sub =Y 11 +Y 12 .

[0057] exist figure 2 middle, Y s The real part of (10) is It can be seen from the formula that 1 / real(Y s ) and ω 2 (or with f 2 ) into a linear relationship, in figure 2 It can also be seen in the low frequency part (0-3GHz), 1 / real(Y s ) and f 2 into a good linear relationship. From this you can get

[0058] exist image 3 It can be seen in the low frequency part (0-3GHz), [-imag(Y s ) / ω] and real(Y s ) into a good linear relationship. Thus we can obtain L s / R s , reused from figure 2 obtained can calculate L s and R s value.

[0059] exist Figure 4 It can be seen that in the intermediate frequency part (4-10G...

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Abstract

The invention relates to a novel analytical method for extracting parameters of a single Π symmetric model of an equivalent circuit of a silicon-based on-chip spiral inductor considering substrate parasitic inductance. This method is aimed at silicon CMOS VLSI chip technology, especially on-chip spiral inductance devices widely used in radio frequency integrated circuits, and extracts model parameters on the basis of tested S-parameters. The method analyzes a series of characteristic functions reflecting the most important characteristics of the inductance device, and finds that these characteristic functions present certain rules. From the corresponding coefficients, the parameter values ​​of the equivalent circuit model can be directly obtained. This method solves the unavoidable problems of multiple values ​​and non-optimal solutions that cannot be avoided by using traditional iterative and fitting methods to extract parameters in the world, and also fully considers the influence of substrate parasitic inductance on the entire circuit. Using the parameters extracted by this method to perform inductance simulation can achieve high-precision agreement with the test results.

Description

Technical field [0001] The invention relates to a method for extracting single Π symmetrical model parameters of the equivalent circuit of silicon-based integrated circuits on-chip components, in particular to a method for extracting equivalent circuit model parameters of on-chip spiral inductors. Background technique [0002] At present, the calculation and extraction methods of silicon-based on-chip inductor model parameters that are mature in the world include physical model calculation methods and parameter extraction methods based on test data. [0003] One method to solve the parameters of the inductance model is the physical model method, please refer to Jenei S, et.al, "Physics-based closed-form inductance expression for compact modeling of integrated spiral inductors," IEEE JSolid-State Circuits, vol.37(1 ), pp.77-80, Jan.2002. For the method of using physical models to calculate parameter values, because of the complexity of various processes and various parasitic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 姜楠谢利刚黄风义
Owner S TEK SHANGHAI HIGH FREQUENCY COMM TECH
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