Perpendicular magnetic record medium and magnetic storage system

A technology of perpendicular magnetic recording and magnetic recording, which is applied in the direction of recording information storage, magnetic recording, recording head casing/shield cover, etc., which can solve the problem of reducing the magnetic anisotropy energy of magnetic crystal grains, failing to obtain low-noise characteristics, and failing to obtain issues of resistance

Inactive Publication Date: 2007-07-11
HITACHI GLOBAL STORAGE TECH NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case where the amount of Cr is insufficient, in the formation process of the recording layer, the crystal grains tend to join each other to expand or the reduction of the magnetic exchange coupling between the crystal grains becomes insufficient, thereby failing to obtain low-noise characteristics
On the other hand, in the case where the amount of Cr is increased, a large amount of Cr remains in the crystal grains, which lowers the magnetic anisotropy energy of the magnetic crystal grains, whereby sufficient resistance against thermal demagnetization cannot be obtained

Method used

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  • Perpendicular magnetic record medium and magnetic storage system
  • Perpendicular magnetic record medium and magnetic storage system
  • Perpendicular magnetic record medium and magnetic storage system

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0050] FIG. 1 shows the layer structure of the perpendicular magnetic recording medium of this embodiment. A glass magnetic disk substrate (2.5-inch type) having a thickness of 0.63 mm and a diameter of 6.5 mm formed on its surface with concentric circular grooves was used as the substrate 11 . On the substrate 11 , an adhesion layer 12 , a soft underlayer 13 , a first seed layer 141 , a second seed layer 142 , an intermediate layer 15 , a perpendicular recording layer 16 and an overcoat layer 17 are sequentially formed by sputtering. Table 1 summarizes the target composition, Ar gas pressure, and film thickness used in this example.

[0051] Table 1

[0052] target ingredient

(at.%)

Ar air pressure (Pa)

Rate(nm / s)

Thickness (nm)

Adhesive layer 12

Ni 63 Ta 37

1

5

10

soft bottom

Layer 13

First soft layer 131

co 92 Ta 3 Zr 5

0.5

12.5

50...

no. 2 example

[0068] A dielectric having the same layer structure as Dielectric 1-1 of the first embodiment but having a different seed layer was manufactured, and its dielectric S / N and corrosion resistance were evaluated by the same technique as used in the first embodiment. Except for the seed layer, the composition, film thickness, and film formation process of each layer were the same as those of Medium 1-1. Here, each material used for the first seed layer is an amorphous alloy, and each material used for the second seed layer is a crystalline alloy having a face centered cubic (fcc) structure. The film thicknesses were set to 2 nm and 5 nm, respectively.

[0069] Table 4

[0070] sample

[0071] The media 4-1 to 4-8 are media whose first seed layer was fixed to CrTi and whose material of the second seed layer was changed. In addition, media 4-9 to 4-15 are media whose second seed layer is fixed to NiW and whose first seed layer material is changed. As shown in Table 4, e...

no. 3 example

[0073] Several media having the same layer structure as the medium 1-1 of the first embodiment but having recording layers different from those media were manufactured, and their media S / N were evaluated using the same technique as used in the first embodiment and corrosion resistance. Except for the recording layer, the composition, film thickness, and film forming process of each layer were the same as those of Medium 1-1. The medium 5-1 is composed of a recording layer having a granular structure composed of CoCrPt to which Ta oxide is added. The recording layers of the medium 5-2 and the medium 5-3 are composed of a multilayer of Co and Pd and a multilayer of Co and Pt, respectively.

[0074] As shown in Table 5, the corrosion resistance of each was excellent and was in rank A. In terms of medium S / N, medium 5-1 is the best. Therefore, it was found that even if a Co / Pd or Co / Pt multilayer is used for the recording layer, an excellent medium S / N can be obtained with the ...

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Abstract

Embodiments in accordance with the invention realize a perpendicular magnetic record medium with a high media S / N and excellent corrosion resistance. In a perpendicular magnetic record medium in accordance with an embodiment of the present invention prepared by forming an adhesion layer, an underlayer, a seed layer, an intermediate layer, and a recording layer sequentially on a substrate, the seed layer is specified to have a laminated structure consisting of a first seed layer and a second seed layer. The first seed layer consists of an amorphous alloy containing Cr and the second seed layer consists of an amorphous alloy predominantly composed of Ni with an fcc structure.

Description

technical field [0001] The present invention relates to a magnetic recording medium capable of recording large-capacity information, and more particularly, to a magnetic recording medium suitable for high-density magnetic recording and a magnetic memory using the same. Background technique [0002] Recently, since there is a strong demand for manufacturing a magnetic memory having a large capacity in the case where a large-capacity magnetic disk device is mounted not only on a personal computer but also on a home appliance device, the magnetic memory is required to have an increased recording density . In order to deal with this problem, efforts are being made to develop magnetic heads, magnetic recording media, and the like. However, it is difficult to increase the recording density using the longitudinal magnetic recording which has been put into practical use at present. Thus, perpendicular magnetic recording is being studied as a method to replace the longitudinal magn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/66G11B5/738G11B5/11G11B5/02C22C19/03C22C28/00
CPCG11B5/732G11B5/4555G11B5/7379
Inventor 荒井礼子马渊胜美正田光弘松本浩之中川宏之
Owner HITACHI GLOBAL STORAGE TECH NETHERLANDS BV
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